Datasheet > MJ15002

MJ15002

更新时间： 2024-09-12 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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MJ15002 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

MJ15002

DESCRIPTION

·With TO-3 package

·Complement to type MJ15001

·Excellent safe operating area

APPLICATIONS

·For high power audio,disk head positioners

and other linear applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-140

-5

UNIT

Open base

Open collector

-15

I_B

Base current

-5

I_E

Emitter current

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

250

℃

T_j

200

T_stg

-65~200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance junction to case

0.875

℃/W

12 3

中文翻译

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与MJ15002相关器件

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MJ15002G	ONSEMI	获取价格	Complementary Silicon Power Transistors
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MJ15003	Wing Shing	获取价格	NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
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MJ15003	SAVANTIC	获取价格	Silicon NPN Power Transistors
MJ15003	MOSPEC	获取价格	POWER TRANSISTORS(20A,140V,250W)
MJ15003G	ONSEMI	获取价格	Complementary Silicon Power Transistors
MJ15004	ISC	获取价格	Silicon PNP Power Transistors
MJ15004	SAVANTIC	获取价格	Silicon PNP Power Transistors