Datasheet > MJ13101

MJ13101

更新时间： 2024-02-29 20:01:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	144K
描述
Silicon NPN Power Transistors

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数据手册

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MJ13101 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJ13100/13101

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)—MJ13100

= 450V(Min)—MJ13101

·High Switching Speed

APPLICATIONS

·Designed for high-voltage ,high-speed, power switching in

inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switch-mode applications.

Typical applications:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Motor controls

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

650

750

400

450

UNIT

MJ13100

MJ13101

MJ13100

MJ13101

V_CEV

Collector-Emitter Voltage

V_CEO(SUS)Collector-Emitter Voltage

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_BM

P_C

T_J

Collector Power Dissipation@T_C=25℃

Junction Temperature

175

200

-65~200

℃

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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