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MJ13332 PDF预览

MJ13332

更新时间: 2024-10-01 10:55:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 137K
描述
Silicon NPN Power Transistor

MJ13332 数据手册

 浏览型号MJ13332的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
MJ13330  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 200V(Min)  
·High Switching Speed  
APPLICATIONS  
·Designed for high-voltage ,high-speed, power switching in  
inductive circuits where fall time is critical. They are partic-  
ularly suited for line operated switch-mode applications.  
Typical applications:  
·Switching regulators  
·Inverters  
·Solenoid and relay drivers  
·Motor controls  
·Deflection circuits  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCEV  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
400  
200  
6
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
20  
A
ICM  
30  
A
IB  
10  
A
IBM  
20  
A
PC  
Collector Power Dissipation@TC=25  
Junction Temperature  
175  
200  
-65~200  
W
TJ  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.0  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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