Datasheet > MIMMG150SR170B

MIMMG150SR170B

更新时间： 2024-09-17 21:21:55

品牌	Logo	应用领域
MICROSS		栅
页数	文件大小	规格书
5页	2081K
描述
Insulated Gate Bipolar Transistor

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数据手册

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MIMMG150SR170B 数据手册

MIMMG150SR170B

1700V 150A IGBT Module

RoHS Compliant

FEATURES

□ Ultra Low Loss

□ High Ruggedness

□ High Short Circuit Capability

□ V_CE(sat)With Positive Temperature Coefficient

□ With Fast Free-Wheeling Diodes

□ Passivation: alpha-si and silicon nitride plus polyimide

APPLICATIONS

□ Inverter

GS Series Module

□ Convertor

□ Welder

□ SMPS and UPS

□ Induction Heating

ABSOLUTE MAXIMUM RATINGS

T_C=25°C unless otherwise specified

Symbol

IGBT

V_CES

V_GES

I_C

Parameter

Test Conditions

Values

Unit

Collector - Emitter Voltage

Gate - Emitter Voltage

V_GE=0V, T_Vj≥25°C

1700

±20

DC Collector Current

150

I_CM

Peak Collector Current

Power Dissipation Per IGBT

Junction Temperature Range

Storage Temperature Range

Insulation Test Voltage

Limited by T_Vjmax

300

P_tot

625

°C

T_Vj

-40 to +150

-40 to +125

3000

T_STG

V_isol

AC, t=1min

Free-Wheeling Diode

V_RRM

I_F(AV)

I_F(RMS)

I_FSM

Repetitive Reverse Voltage

1700

150

T_C=25°C 180° rect.

T_C=95°C 180° rect.

Average Forward Current

100

RMS Forward Current

Non-Repetitive Surge

Forward Current

210

T_Vj=45°C,V_R=0V,t=10ms,Sine

T_Vj=45°C,V_R=0V,t=8.3ms,Sine

1100

1200

12 3 4 5

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