Datasheet > MIMMG200S060B6EN

MIMMG200S060B6EN

更新时间： 2024-09-17 19:32:55

品牌	Logo	应用领域
MICROSS		栅
页数	文件大小	规格书
5页	2137K
描述
Insulated Gate Bipolar Transistor

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数据手册

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MIMMG200S060B6EN 数据手册

MIMMG200S060B6EN

600V 200A IGBT Module

RoHS Compliant

FEATURES

□ High short circuit capability,self limiting short circuit current

□ V_CE(sat)with positive temperature coefficient

□ Fast switching and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

□ Low switching losses

APPLICATIONS

GS Series Module

□ High frequency switching application

□ Medical applications

□ Motion/servo control

□ UPS systems

ABSOLUTE MAXIMUM RATINGS

T_C=25°C unless otherwise specified

Symbol

IGBT

V_CES

Parameter

Test Conditions

Values

Unit

Collector - Emitter Voltage

Gate - Emitter Voltage

T_Vj=25°C

600

±20

300

V_GES

T_C=25°C

I_C

DC Collector Current

T_C=60°C

t_p=1ms

200

400

600

I_CM

Repetitive Peak Collector Current

Power Dissipation Per IGBT

P_tot

Diode

V_RRM

Repetitive Reverse Voltage

Average Forward Current

T_Vj=25°C

600

300

T_C=25°C

I_F(AV)

T_C=60°C

200

I_FRM

I²t

Repetitive Peak Forward Current

t_p=1ms

400

T_Vj=125°C, t=10ms, V_R=0V

3500

A²s

12 3 4 5

中文翻译

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