Datasheet > MIMMG200D120B6UN

MIMMG200D120B6UN

更新时间： 2024-09-17 21:15:23

品牌	Logo	应用领域
MICROSS		栅
页数	文件大小	规格书
5页	2681K
描述
Insulated Gate Bipolar Transistor

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MIMMG200D120B6UN 数据手册

MIMMG200D120B6UN

1200V 200A IGBT Module

RoHS Compliant

FEATURES

· Ultra Low Loss

· High Ruggedness

· High Short Circuit Capability

· Positive Temperature Coefficient

· With Fast Free-Wheeling Diodes

APPLICATIONS

· Invertor

· Convertor

· Welder

GD Series Module

· SMPS and UPS

· Induction Heating

ABSOLUTE MAXIMUM RATINGS

T_C=25°C unless otherwise specified

Symbol

IGBT

V_CES

Parameter

Test Conditions

Values

Unit

Collector - Emitter Voltage

Gate - Emitter Voltage

1200

±20

V_GES

T_C=25°C

280

I_C

DC Collector Current

T_C=75°C

200

T_C=25°C, t_p=1ms

T_C=75°C, t_p=1ms

560

I_Cpuls

Pulsed Collector Current

400

P_tot

T_J

Power Dissipation Per IGBT

Junction Temperature Range

Storage Temperature Range

Insulation Test Voltage

1400

°C

-40 to +150

-40 to +125

3000

T_STG

V_isol

AC, t=1min

Free-Wheeling Diode

V_RRM

I_F(AV)

I_F(RMS)

I_FSM

Repetitive Reverse Voltage

1200

250

T_C=25°C

T_C=75°C

Average Forward Current

190

RMS Forward Current

Non-Repetitive Surge

Forward Current

280

T_J=45°C, t=10ms, Sine

T_J=45°C, t=8.3ms, Sine

1860

1960

12 3 4 5

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