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MGFC45V5053A

更新时间： 2024-02-24 17:09:14
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
1页 20K
描述
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET

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中文翻译

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MGFC45V5053A 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
其他特性：HIGH RELIABILITY, HIGH EFFICIENCY外壳连接：SOURCE
配置：SINGLE最大漏极电流 (Abs) (ID)：20 A
最大漏极电流 (ID)：20 AFET 技术：JUNCTION
最高频带：C BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：150 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

MGFC45V5053A 数据手册

  
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC45V5053A  
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET  
DESCRIPTION  
Until : millimeters (inches)  
OUTLINE DRAWING  
The MGFC45V5053A is an internally impedance matched  
GaAs power FET especially designed for use in 5.05~5.25  
GHz band amplifiers. The hermetically sealed metal-ceramic  
package guarantees high reliability.  
24±0.3 (0.945±0.012)  
(0.024±0.006)  
0.6±0.15  
FEATURES (TARGET)  
R1.2  
Internally matched to 50 (W) system  
High output power  
P1dB=32W (TYP.) @f=5.05~5.25GHz  
High power gain  
GLP=10.0dB (TYP.) @f=5.05~5.25GHz  
High power added efficiency  
P.A.E.=33% (TYP.) @f=5.05~5.25GHz  
Low distortion [item -51]  
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.  
20.4±0.2 (0.803±0.008)  
16.7 (0.658)  
APPLICATION  
5.05~5.25GHz band amplifiers  
QUALITY GRADE  
IG  
RECOMMENDED BIAS CONDITIONS  
VDS=10V  
ID=8A  
RG=25WRefer to Bias Procedure  
(1) GATE  
(2) Source (FLANGE)  
(3) DRAIN  
GF-38  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
-15  
Unit  
V
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable,  
but there is always the possibility that trouble may occur  
with them.Trouble with semiconductors may lead to personal  
injury, fire or property damage. Remember to give due  
consideration to safety when making your circuit designs,  
with appropriate measures such as (i)placement of  
-15  
V
20  
A
IGR  
IGF  
Reverse gate current  
Forward gate current  
Total power dissipation  
Channel temperature  
-80  
168  
150  
175  
mA  
mA  
W
PT  
*1  
Tch  
°C  
substitutive, auxiliary circuits, (ii)use of non-flammable  
material or (iii)prevention against any malfunction or mishap.  
Tstg  
Storage temperature  
-65 ~ +175  
°C  
*1 : Tc=25°C  
ELECTRICAL CHARACTERISTICS  
Limits  
Test conditions  
VDS=3V, IGS=0V  
Unit  
Symbol  
Parameter  
Min.  
Typ.  
Max  
IDSS  
Saturated drain current  
Transconductance  
—
—
-2  
24  
8
—
—
-5  
V
S
V
Gm  
VDS=3V, ID=8V  
VGS (off)  
Gate to Source cut-off voltage  
VDS=3V, ID=160mA  
—
Output power at 1dB gain  
compression  
—
—
P1dB  
44  
9
45  
dBm  
dB  
GLP  
Linear power gain  
VDS=10V, ID=8A, f=5.05~5.25GHz  
9.5  
P.A.E.  
—
—
Power added efficiency  
3rd order IM distortion  
—
-42  
—
34  
-45  
0.8  
%
IM3  
*2  
dBc  
°C/W  
DVf method  
Rth (ch-c) Thermal resistance  
*1  
1.0  
*1 : Channel to case  
*2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=5.05, 5.15, 5.25GHz, Delta f=5MHz  
MITSUBISHI  
ELECTRIC  
1

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