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MG300J1US1

更新时间: 2024-11-17 15:41:39
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网双极性晶体管功率控制
页数 文件大小 规格书
1页 47K
描述
TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MG300J1US1 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code:unknown风险等级:5.81
其他特性:HIGH SPEED最大集电极电流 (IC):300 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):350 nsJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
VCEsat-Max:4 VBase Number Matches:1

MG300J1US1 数据手册

  

MG300J1US1 替代型号

型号 品牌 替代类型 描述 数据表
MG400J1US11 TOSHIBA

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