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MG300Q2YS60A PDF预览

MG300Q2YS60A

更新时间: 2024-11-17 03:10:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率控制电机局域网
页数 文件大小 规格书
8页 219K
描述
High Power Switching Applications Motor Control Applications

MG300Q2YS60A 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X11针数:11
Reach Compliance Code:unknown风险等级:5.83
外壳连接:ISOLATED最大集电极电流 (IC):300 A
集电极-发射极最大电压:1200 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X11
元件数量:2端子数量:11
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2800 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICONVCEsat-Max:2.8 V
Base Number Matches:1

MG300Q2YS60A 数据手册

 浏览型号MG300Q2YS60A的Datasheet PDF文件第2页浏览型号MG300Q2YS60A的Datasheet PDF文件第3页浏览型号MG300Q2YS60A的Datasheet PDF文件第4页浏览型号MG300Q2YS60A的Datasheet PDF文件第5页浏览型号MG300Q2YS60A的Datasheet PDF文件第6页浏览型号MG300Q2YS60A的Datasheet PDF文件第7页 
MG300Q2YS60A  
MITSUBISHI IGBT Module  
MG300Q2YS60A(1200V/300A 2in1)  
High Power Switching Applications  
Motor Control Applications  
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.  
(short circuit and over temperature)  
The electrodes are isolated from case.  
Low thermal resistance  
V
= 2.4 V (typ.)  
CE (sat)  
Equivalent Circuit  
1  
5
6
7
F
F
O
E1/C2  
4
OT  
1
2
3
O
E2  
Signal terminal  
1.  
5.  
G (L)  
G (H)  
2.  
6.  
F
(L)  
3.  
7.  
E (L)  
E (H)  
4.  
8.  
V
D
O
F
O
(H)  
Open  
2004-10-01 1/8  

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