MG1009-11

更新时间： 2024-09-22 11:02:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
4页	187K
描述
GUNN Diodes Cathode Heat Sink

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MG1009-11 数据手册

GUNN Diodes

Cathode Heat Sink

MG1001 – MG1061

Discrete Frequency: Cathode Heatsink

Features

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CW Designs to 500 mW

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Pulsed Designs to 10 W

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Frequency Coverage Specified from 5.9–95 GHz

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Low Phase Noise

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High Reliability

Applications

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Motion Detectors

Description

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Transmitters and Receivers

Microsemi’s GaAs Gunn diodes, epi-down (cathode

heatsink), are fabricated from epitaxial layers grown at

MSC by the Vapor Phase Epitaxy technique. The layers

are processed using proprietary techniques resulting in

low phase and 1/f noise. MDT Gunn diodes are

available in a variety of microwave ceramic packages

are available for operation from 5–110 GHz.

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Beacons

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Automotive Collision Avoidance Radars

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Radars

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Radiometers

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Instrumentation

Microsemi

Rev: 2009-01-19

Page 1

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

12 3 4

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