是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | O-CUPM-N1 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.60 |
风险等级: | 5.72 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 应用: | CONTINUOUS WAVE |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | GALLIUM ARSENIDE | 二极管类型: | GUNN DIODE |
JESD-30 代码: | O-CUPM-N1 | 元件数量: | 1 |
端子数量: | 1 | 典型工作电流: | 1300 mA |
最大工作频率: | 12 GHz | 最小工作频率: | 8.2 GHz |
标称工作电压: | 10 V | 最小输出功率: | 0.5 W |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
子类别: | Microwave Special Purpose Diodes | 表面贴装: | NO |
技术: | GUNN | 端子形式: | NO LEAD |
端子位置: | UPPER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG1009 | TEMIC |
获取价格 |
OT PLD, CMOS, | |
MG1009-11 | MICROSEMI |
获取价格 |
GUNN Diodes Cathode Heat Sink | |
MG1009E | TEMIC |
获取价格 |
Logic Circuit, | |
MG-100-B-9V-R | AMPHENOL |
获取价格 |
Peizoresistive Sensor, | |
MG100G1AL3 | TOSHIBA |
获取价格 |
TRANSISTOR 100 A, 450 V, NPN, Si, POWER TRANSISTOR, 2-68D1A, 3 PIN, BIP General Purpose Po | |
MG100G2CH1 | TOSHIBA |
获取价格 |
TRANSISTOR,MOS-BJT POWER MODULE,HALF BRIDGE,500V V(BR)CEO,100A I(C) | |
MG100G2CL1 | TOSHIBA |
获取价格 |
TECHNICAL DATA | |
MG100G2DL1 | TOSHIBA |
获取价格 |
TECHNICAL DATA | |
MG100G2JL1 | TOSHIBA |
获取价格 |
TECHNICAL DATA | |
MG100G2YK1 | ETC |
获取价格 |
TRANSISTOR MODULES |