5秒后页面跳转
捷配首页

Datasheet > MD7IC18120NR1
MD7IC18120NR1 PDF预览

MD7IC18120NR1

更新时间： 2024-11-18 14:53:19
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
18页 674K
描述
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-1880 MHz, 30 W Avg., 28 V

阅读下载

中文翻译

获取价格

MD7IC18120NR1 技术参数

是否无铅：含铅是否Rohs认证：符合
生命周期：TransferredReach Compliance Code：not_compliant
风险等级：5.63Is Samacsys：N
Base Number Matches：1

MD7IC18120NR1 数据手册

 浏览型号MD7IC18120NR1的Datasheet PDF文件第2页浏览型号MD7IC18120NR1的Datasheet PDF文件第3页浏览型号MD7IC18120NR1的Datasheet PDF文件第4页浏览型号MD7IC18120NR1的Datasheet PDF文件第5页浏览型号MD7IC18120NR1的Datasheet PDF文件第6页浏览型号MD7IC18120NR1的Datasheet PDF文件第7页 
Document Number: MD7IC18120N  
Rev. 0, 5/2010  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
MD7IC18120NR1  
MD7IC18120GNR1  
The MD7IC18120N/GN wideband integrated circuit is designed with on--chip  
matching that makes it usable from 1805 to 1880 MHz. This multi--stage  
structure is rated for 26 to 32 Volt operation and covers all typical cellular base  
station modulation formats.  
1805--1880 MHz, 30 W AVG., 28 V  
SINGLE W--CDMA  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,  
IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, Pout  
30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,  
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.  
=
G
PAE  
(%)  
Output PAR  
(dB)  
ps  
Frequency  
1805 MHz  
1840 MHz  
1880 MHz  
(dB)  
25.7  
25.7  
25.8  
CASE 1866--02  
TO--270 WBL--16  
PLASTIC  
36.7  
36.3  
35.3  
6.9  
6.9  
6.7  
MD7IC18120NR1  
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 140 Watts CW  
Output Power  
•
•
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 Watts CW Pout  
Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW  
Features  
CASE 1867--02  
TO--270 WBL--16 GULL  
PLASTIC  
•
•
•
Production Tested in a Symmetrical Doherty Configuration  
100% PAR Tested for Guaranteed Output Power Capability  
Characterized with Large--Signal Load--Pull Parameters and Common  
Source S--Parameters  
MD7IC18120GNR1  
•
•
•
•
•
•
•
On--Chip Matching (50 Ohm Input, DC Blocked)  
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C Operation  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
V
V
DS1A  
N.C.  
DS1A  
GS2A  
1
2
3
V
V
V
Quiescent Current  
Temperature Compensation  
GS2A  
GS1A  
(1)  
V
16  
15  
4
GS1A  
N.C.  
RF /V  
outA DS2A  
5
(2)  
RF  
6
PEAKING  
RF /V  
inA  
N.C.  
7
RF  
inA  
inB  
outA DS2A  
N.C.  
8
9
RF  
inB  
N.C.  
10  
11  
12  
13  
14  
RF /V  
outB DS2B  
V
GS1B  
GS2B  
DS1B  
N.C.  
V
RF  
RF /V  
outB DS2B  
V
(2)  
CARRIER  
(Top View)  
V
V
GS1B  
GS2B  
Quiescent Current  
Temperature Compensation  
(1)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
V
DS1B  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.  
2. Peaking and Carrier orientation is determined by the test fixture design.  
© Freescale Semiconductor, Inc., 2010. All rights reserved.  
1234567...18

中文翻译

下载PDF

与MD7IC18120NR1相关器件

型号 品牌 获取价格 描述 数据表
MD7IC1812GNR1 NXP

获取价格

 		RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
MD7IC1812NR1 NXP

获取价格

 		Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28
MD7IC2012GNR1 NXP

获取价格

 		RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2012N NXP

获取价格

 		RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2012NR1 NXP

获取价格

 		RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1 FREESCALE

获取价格

 		RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1 NXP

获取价格

 		Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
MD7IC2050NBR1 FREESCALE

获取价格

 		RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NR1 NXP

获取价格

 		Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
MD7IC2050NR1 FREESCALE

获取价格

 		RF LDMOS Wideband Integrated Power Amplifiers

与MD7IC18120NR1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证