Datasheet > MD7IC1812GNR1

MD7IC1812GNR1

更新时间： 2024-11-18 19:49:47

品牌	Logo	应用领域
恩智浦 - NXP		高功率电源放大器射频微波功率放大器
页数	文件大小	规格书
19页	520K
描述
RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

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MD7IC1812GNR1 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.68	JESD-609代码：	e3
射频/微波设备类型：	NARROW BAND HIGH POWER	端子面层：	Tin (Sn)
Base Number Matches：	1

MD7IC1812GNR1 数据手册

Document Number: MD7IC1812N

Rev. 0, 5/2015

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

MD7IC1812NR1

MD7IC1812GNR1

The MD7IC1812N wideband integrated circuit is designed with on--chip

matching that makes it usable from 1805 to 2170 MHz. This multi--stage

structure is rated for 24 to 32 V operation and covers all typical cellular base

station modulation formats.

1805–2170 MHz, 1.3 W AVG., 28 V

SINGLE W--CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

Driver Application — 1800 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ1A= I_DQ1B= 20 mA, I_DQ2A= I_DQ2B= 70 mA, P_out= 1.3 W Avg.,

IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

PAE

(%)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

31.9

31.6

31.5

13.0

13.4

14.0

–50.3

–50.2

–49.8



Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 19 W CW

Output Power (3 dB Input Overdrive from Rated P_out

TO--270WB--14

PLASTIC

MD71C1812NR1

)

Driver Application — 1900 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ1A= I_DQ1B= 20 mA, I_DQ2A= I_DQ2B= 70 mA, P_out= 1.3 W Avg.,

IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

PAE

(%)

ACPR

(dBc)

Frequency

1930 MHz

1960 MHz

1995 MHz

(dB)

32.2

32.1

32.0

TO--270WBG--14

PLASTIC

MD71C1812GNR1

15.2

15.1

–51.6

–52.3

–52.6

Driver Application — 2100 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ1A= I_DQ1B= 20 mA, I_DQ2A= I_DQ2B= 70 mA, P_out= 1.3 W Avg.,

IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

PAE

(%)

ACPR

(dBc)

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

32.2

32.3

32.5

14.8

14.6

14.4

–52.8

–52.6

–49.4

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

Integrated Quiescent Current Temperature Compensation with Enable/Disable Function ⁽¹⁾

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current

Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.

MD7IC1812NR1 MD7IC1812GNR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...19

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与MD7IC1812GNR1相关器件

型号	品牌	获取价格	描述	数据表
MD7IC1812NR1	NXP	获取价格	Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28
MD7IC2012GNR1	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2012N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2012NR1	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1	NXP	获取价格	Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
MD7IC2050NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NR1	NXP	获取价格	Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
MD7IC2050NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NR1_10	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers

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