Document Number: MD7IC2251N
Rev. 0, 5/2012
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MD7IC2251NR1
MD7IC2251GNR1
The MD7IC2251N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110--2170 MHz. This multi--stage
structure is rated for 26 to 32 volt operation and covers all typical cellular
base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
DD = 28 Volts, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc,
V
2110--2170 MHz, 12 W AVG., 28 V
SINGLE W--CDMA
Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
G
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
28.8
29.0
29.2
38.2
37.9
37.4
7.1
7.1
6.9
--34.6
--36.2
--36.1
TO--270 WB--14
PLASTIC
MD7IC2251NR1
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout
Typical Pout @ 3 dB Compression Point ≃ 58 Watts (1)
)
TO--270 WB--14 GULL
PLASTIC
MD7IC2251GNR1
Features
•
•
•
•
•
•
•
•
100% PAR Tested for Guaranteed Output Power Capability
Production Tested in a Symmetrical Doherty Configuration
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
Integrated ESD Protection
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
V
DS1A
Carrier
(3)
CARRIER
RF /V
V
1
2
DS1A
GS2A
V
V
RF
inA
out1 DS2A
14
13
3
GS1A
RF
RF /V
out1 DS2A
4
inA
NC
NC
NC
NC
5
6
V
V
GS1A
GS2A
Quiescent Current
Temperature Compensation
7
(2)
(2)
8
RF
9
RF /V
out2 DS2B
inB
V
V
GS1B
GS2B
Quiescent Current
Temperature Compensation
V
10
11
GS1B
GS2B
V
V
12 Peaking
DS1B
(3)
PEAKING
RF /V
(Top View)
RF
inB
out2 DS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
V
DS1B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. P3dB =P +7.0 dB whereP
is the averageoutput power measured using an unclipped W--CDMA single--carrier input signal where output
avg
avg
PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/ApplicationNotes -- AN1977 orAN1987.
3. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
1