Datasheet > MD7P19130H_10

MD7P19130H_10

更新时间： 2024-11-18 12:24:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	756K
描述
RF Power Field Effect Transistors

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MD7P19130H_10 数据手册

Document Number: MD7P19130H

Rev. 2, 8/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MD7P19130HR3

MD7P19130HSR3

Designed for CDMA base station applications with frequencies from 1930 to

1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN -- PCS/cellular radio and WLL

applications.

•

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

I_DQ= 1250 mA, P_out= 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @

0.01% Probability on CCDF.

1930--1990 MHz, 40 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

Power Gain — 20 dB

Drain Efficiency — 30%

Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — --36 dBc in 3.84 MHz Channel Bandwidth

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW

Output Power

P_out@ 1 dB Compression Point ≃ 130 Watts CW

Features

CASE 465M--01, STYLE 1

N I -- 7 8 0 -- 4

•

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

MD7P19130HR3

•

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465H--02, STYLE 1

NI--780S--4

MD7P19130HSR3

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +65

--6.0, +10

32, +0

Unit

Drain--Source Voltage

Vdc

°C

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

-- 65 to +150

150

°C

(1,2)

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MD7P19130HR3 MD7P19130HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

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与MD7P19130H_10相关器件

型号	品牌	获取价格	描述	数据表
MD7P19130HR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MD7P19130HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
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