Datasheet > MD7IC2012GNR1

MD7IC2012GNR1

更新时间： 2024-11-19 01:13:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	351K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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MD7IC2012GNR1 数据手册

Document Number: MD7IC2012N

Rev. 0, 4/2013

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

MD7IC2012NR1

MD7IC2012GNR1

The MD7IC2012N wideband integrated circuit is designed with on−chip

matching that makes it usable from 1805 to 2170 MHz. This multi−stage

structure is rated for 24 to 32 volt operation and covers all typical cellular

base station modulation formats.

1805−2170 MHz, 1.3 W AVG., 28 V

SINGLE W−CDMA

Driver Application — 2100 MHz

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

• Typical Single−Carrier W−CDMA Performance: V_DD= 28 Volts,

_DQ1A= I_DQ1B= 20 mA, I_DQ2A= I_DQ2B= 70 mA, P_out= 1.3 Watts Avg.,

IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

PAE

(%)

ACPR

(dBc)

TO−270 WB−14

PLASTIC

MD7IC2012NR1

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

31.0

31.3

31.5

14.7

14.8

14.9

−51.3

−51.2

−50.6

TO−270 WB−14 GULL

PLASTIC

MD7IC2012GNR1

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 14 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

)

• Typical P_out@ 1 dB Compression Point ] 12 Watts CW

Driver Application — 1800 MHz

• Typical Single−Carrier W−CDMA Performance: V_DD= 28 Volts,

I_DQ1A= I_DQ1B= 20 mA, I_DQ2A= I_DQ2B= 70 mA, P_out= 1.3 Watts Avg.,

IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

PAE

(%)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

32.8

32.2

31.6

13.4

13.6

13.8

−51.0

−51.2

−51.8

Features

• Characterized with Series Equivalent Large−Signal Impedance Parameters and Common Source S−Parameters

• On−Chip Matching (50 Ohm Input, DC Blocked)

• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function ⁽¹⁾

• Integrated ESD Protection

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• 225°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13−inch Reel.

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes − AN1977 or AN1987.

MD7IC2012NR1 MD7IC2012GNR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...19

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与MD7IC2012GNR1相关器件

型号	品牌	获取价格	描述	数据表
MD7IC2012N	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2012NR1	NXP	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1	NXP	获取价格	Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
MD7IC2050NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NR1	NXP	获取价格	Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
MD7IC2050NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NR1_10	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC21100GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC21100N	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers

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