Document Number: MD7IC21100N
Rev. 2, 2/2012
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC21100N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110 to 2170 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD--SCDMA.
MD7IC21100NR1
MD7IC21100GNR1
MD7IC21100NBR1
•
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1A
IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 Watts Avg.,
+
2110--2170 MHz, 32 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 30%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth
CASE 1618--02
TO--270 WB--14
PLASTIC
•
•
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts CW
(3 dB Input Overdrive from Rated Pout
)
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 100 Watts CW
Pout
Typical Pout @ 1 dB Compression Point ≃ 110 Watts CW
MD7IC21100NR1
.
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
Features
•
•
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S-Parameters
MD7IC21100GNR1
•
•
•
On--Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
Internally Matched for Ease of Use
CASE 1617--02
TO--272 WB--14
PLASTIC
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
MD7IC21100NBR1
•
•
•
Integrated ESD Protection
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
V
DS1A
V
1
2
DS1A
GS2A
V
V
RF
14
13
RF /V
out1 DS2A
inA
3
GS1A
RF /V
out1 DS2A
NC
4
RF
5
inA
NC
6
V
V
GS1A
GS2A
Quiescent Current
Temperature Compensation
NC
7
(1)
(1)
8
9
10
11
12
RF
inB
NC
RF /V
out2 DS2B
V
V
GS1B
GS2B
Quiescent Current
Temperature Compensation
V
GS1B
GS2B
DS1B
V
V
RF
(Top View)
inB
RF /V
out2 DS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
V
DS1B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.
© Freescale Semiconductor, Inc., 2008, 2011--2012. All rights reserved.
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
RF Device Data
Freescale Semiconductor, Inc.
1