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MD7IC21100N_12 PDF预览

MD7IC21100N_12

更新时间: 2024-11-18 11:44:51
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描述
RF LDMOS Wideband Integrated Power Amplifiers

MD7IC21100N_12 数据手册

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Document Number: MD7IC21100N  
Rev. 2, 2/2012  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MD7IC21100N wideband integrated circuit is designed with on--chip  
matching that makes it usable from 2110 to 2170 MHz. This multi--stage  
structure is rated for 24 to 32 Volt operation and covers all typical cellular base  
station modulation formats including TD--SCDMA.  
MD7IC21100NR1  
MD7IC21100GNR1  
MD7IC21100NBR1  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1A  
IDQ1B = 190 mA, IDQ2A + IDQ2B = 925 mA, Pout = 32 Watts Avg.,  
+
2110--2170 MHz, 32 W AVG., 28 V  
SINGLE W--CDMA  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,  
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.  
Power Gain — 28.5 dB  
Power Added Efficiency — 30%  
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF  
ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth  
CASE 1618--02  
TO--270 WB--14  
PLASTIC  
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts CW  
(3 dB Input Overdrive from Rated Pout  
)
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 100 Watts CW  
Pout  
Typical Pout @ 1 dB Compression Point 110 Watts CW  
MD7IC21100NR1  
.
CASE 1621--02  
TO--270 WB--14 GULL  
PLASTIC  
Features  
100% PAR Tested for Guaranteed Output Power Capability  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
and Common Source S-Parameters  
MD7IC21100GNR1  
On--Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)  
Internally Matched for Ease of Use  
CASE 1617--02  
TO--272 WB--14  
PLASTIC  
Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function (1)  
MD7IC21100NBR1  
Integrated ESD Protection  
225°C Capable Plastic Package  
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.  
V
DS1A  
V
1
2
DS1A  
GS2A  
V
V
RF  
14  
13  
RF /V  
out1 DS2A  
inA  
3
GS1A  
RF /V  
out1 DS2A  
NC  
4
RF  
5
inA  
NC  
6
V
V
GS1A  
GS2A  
Quiescent Current  
Temperature Compensation  
NC  
7
(1)  
(1)  
8
9
10  
11  
12  
RF  
inB  
NC  
RF /V  
out2 DS2B  
V
V
GS1B  
GS2B  
Quiescent Current  
Temperature Compensation  
V
GS1B  
GS2B  
DS1B  
V
V
RF  
(Top View)  
inB  
RF /V  
out2 DS2B  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
V
DS1B  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.  
© Freescale Semiconductor, Inc., 2008, 2011--2012. All rights reserved.  

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