Datasheet > MD7IC2050NR1_10

MD7IC2050NR1_10

更新时间： 2024-11-18 11:04:03

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		放大器功率放大器
页数	文件大小	规格书
24页	422K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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MD7IC2050NR1_10 数据手册

Document Number: MD7IC2050N

Rev. 1, 5/2010

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

The MD7IC2050N wideband integrated circuit is designed with on- chip

matching that makes it usable from 1750- 2050 MHz. This multi- stage

structure is rated for 26 to 32 Volt operation and covers all typical cellular

base station modulation formats.

MD7IC2050NR1

MD7IC2050GNR1

MD7IC2050NBR1

• Typical Doherty Single-Carrier W-CDMA Performance: V_DD= 28 Volts,

I_DQ1A= I_DQ1B= 30 mA, I_DQ2A= 230 mA, V_GS2B= 1.4 Vdc, P_out= 10 Watts

Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

1880-2100 MHz, 10 W AVG., 28 V

SINGLE W-CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

2025 MHz

30.5

34.7

8.7

-37.4

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 79 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

CASE 1618-02

TO-270 WB-14

PLASTIC

)

• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 20 Watts to 80 Watts

CW P_out

MD7IC2050NR1

• Typical P_out@ 3 dB Compression Point ] 74 Watts CW

1880 MHz

CASE 1621-02

TO-270 WB-14 GULL

PLASTIC

• Typical Doherty Single-Carrier W-CDMA Performance: V_DD= 28 Volts,

_DQ1A= I_DQ1B= 30 mA, I_DQ2A= 230 mA, V_GS2B= 1.4 Vdc, P_out= 10 Watts

Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

MD7IC2050GNR1

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

1880 MHz

1900 MHz

1920 MHz

(dB)

30.3

30.2

30.1

35.2

34.9

34.8

8.6

8.7

-34.9

-36.3

-36.9

CASE 1617-02

TO-272 WB-14

PLASTIC

Features

MD7IC2050NBR1

• 100% PAR Tested for Guaranteed Output Power Capability

• Production Tested in a Symmetrical Doherty Configuration

• Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source S-Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked)

• Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function ⁽¹⁾

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

ꢀꢁ1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.

MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...24

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与MD7IC2050NR1_10相关器件

型号	品牌	获取价格	描述	数据表
MD7IC21100GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC21100N	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC21100N_12	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC21100NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC21100NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2250GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2250NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2250NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2251GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2251N	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers

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