MCR106-6-VB

更新时间： 2024-11-18 13:11:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		触发装置可控硅整流器
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4页	97K
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MCR106-6-VB 数据手册

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by MCR106/D

SEMICONDUCTOR TECHNICAL DATA

Reverse Blocking Triode Thyristors

*Motorola preferred devices

except MCR106–3

PNPN devices designed for high volume consumer applications such as

temperature, light and speed control; process and remote control, and warning

systems where reliability of operation is important.

SCRs

•

Glass-Passivated Surface for Reliability and Uniformity

Power Rated at Economical Prices

Practical Level Triggering and Holding Characteristics

Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

4 AMPERES RMS

60 thru 600 VOLTS

CASE 77-08

(TO-225AA)

STYLE 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Forward and Reverse Blocking Voltage

(T = 110°C, R = 1 kΩ)

Volts

DRM

and

MCR106-2

RRM

MCR106-3

MCR106-4

MCR106-6

MCR106-8

100

200

400

600

RMS Forward Current

(All Conduction Angles)

Amps

T(RMS)

Average Forward Current

2.55

T(AV)

= 93°C

= 30°C

Peak Non-repetitive Surge Current

Amps

TSM

(1/2 Cycle, 60 Hz, T = –40 to +110°C)

I t

A s

Circuit Fusing Considerations

(t = 8.3 ms)

2.6

Peak Gate Power

0.5

0.1

0.2

Watt

Amp

Volts

°C

Average Gate Power

G(AV)

Peak Forward Gate Current

Peak Reverse Gate Voltage

Operating Junction Temperature Range

RGM

–40 to +110

1. V

and V

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;

RRM

(cont.)

DRM

however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4

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