MCR106-8-VS

更新时间： 2024-01-05 13:00:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		栅极触发装置可控硅整流器局域网
页数	文件大小	规格书
4页	97K
描述
4A, 600V, SCR, TO-225AA

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技术参数
数据手册

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MCR106-8-VS 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.7	外壳连接：	ANODE
配置：	SINGLE	最大直流栅极触发电流：	0.2 mA
最大直流栅极触发电压：	1 V	最大维持电流：	5 mA
JEDEC-95代码：	TO-225AA	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	110 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
最大均方根通态电流：	4 A	重复峰值关态漏电流最大值：	10 µA
断态重复峰值电压：	600 V	重复峰值反向电压：	600 V
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	触发设备类型：	SCR
Base Number Matches：	1

MCR106-8-VS 数据手册

Order this document

by MCR106/D

SEMICONDUCTOR TECHNICAL DATA

Reverse Blocking Triode Thyristors

*Motorola preferred devices

except MCR106–3

PNPN devices designed for high volume consumer applications such as

temperature, light and speed control; process and remote control, and warning

systems where reliability of operation is important.

SCRs

•

Glass-Passivated Surface for Reliability and Uniformity

Power Rated at Economical Prices

Practical Level Triggering and Holding Characteristics

Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

4 AMPERES RMS

60 thru 600 VOLTS

CASE 77-08

(TO-225AA)

STYLE 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Forward and Reverse Blocking Voltage

(T = 110°C, R = 1 kΩ)

Volts

DRM

and

MCR106-2

RRM

MCR106-3

MCR106-4

MCR106-6

MCR106-8

100

200

400

600

RMS Forward Current

(All Conduction Angles)

Amps

T(RMS)

Average Forward Current

2.55

T(AV)

= 93°C

= 30°C

Peak Non-repetitive Surge Current

Amps

TSM

(1/2 Cycle, 60 Hz, T = –40 to +110°C)

I t

A s

Circuit Fusing Considerations

(t = 8.3 ms)

2.6

Peak Gate Power

0.5

0.1

0.2

Watt

Amp

Volts

°C

Average Gate Power

G(AV)

Peak Forward Gate Current

Peak Reverse Gate Voltage

Operating Junction Temperature Range

RGM

–40 to +110

1. V

and V

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;

RRM

(cont.)

DRM

however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4

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