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MCR106-8 PDF预览

MCR106-8

更新时间： 2024-11-20 22:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极局域网
页数 文件大小 规格书
4页 76K
描述
Sensitive Gate Silicon Controlled Rectifiers

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中文翻译

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MCR106-8 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-225AA
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.03外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：10 V/us
最大直流栅极触发电流：0.2 mA最大直流栅极触发电压：1 V
最大维持电流：5 mAJEDEC-95代码：TO-225AA
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
最大漏电流：0.2 mA通态非重复峰值电流：25 A
元件数量：1端子数量：3
最大通态电流：4000 A最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：4 A断态重复峰值电压：600 V
重复峰值反向电压：600 V子类别：Silicon Controlled Rectifiers
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SCR
Base Number Matches：1

MCR106-8 数据手册

 浏览型号MCR106-8的Datasheet PDF文件第2页浏览型号MCR106-8的Datasheet PDF文件第3页浏览型号MCR106-8的Datasheet PDF文件第4页 
Preferred Device  
Reverse Blocking Thyristors  
PNPN devices designed for high volume consumer applications  
such as temperature, light and speed control; process and remote control,  
and warning systems where reliability of operation is important.  
http://onsemi.com  
• Glass-Passivated Surface for Reliability and Uniformity  
• Power Rated at Economical Prices  
• Practical Level Triggering and Holding Characteristics  
• Flat, Rugged, Thermopad Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
SCRs  
4 AMPERES RMS  
400 thru 600 VOLTS  
• Device Marking: Device Type, e.g., MCR106–6, Date Code  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
A
K
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = –40 to 110°C, Sine Wave 50 to  
V
RRM  
J
60 Hz, Gate Open)  
MCR106–6  
MCR106–8  
400  
600  
On-State RMS Current (T = 93°C)  
(180° Conduction Angles)  
I
4.0  
2.55  
25  
Amps  
Amps  
Amps  
C
T(RMS)  
Average On–State Current  
I
T(AV)  
(180° Conduction Angles; T = 93°C)  
C
Peak Non-repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz,  
I
TSM  
3
2
1
T = 110°C)  
J
TO–225AA  
(formerly TO–126)  
CASE 077  
2
2
Circuit Fusing Considerations  
(t = 8.3 ms)  
I t  
2.6  
0.5  
0.1  
0.2  
6.0  
A s  
STYLE 2  
Forward Peak Gate Power  
(T = 93°C, Pulse Width  
C
P
Watt  
Watt  
Amp  
Volts  
°C  
GM  
1.0 µs)  
PIN ASSIGNMENT  
Cathode  
Forward Average Gate Power  
(T = 93°C, t = 8.3 ms)  
C
P
G(AV)  
1
2
3
Anode  
Forward Peak Gate Current  
(T = 93°C, Pulse Width  
C
I
GM  
1.0 µs)  
1.0 µs)  
Gate  
Peak Reverse Gate Voltage  
(T = 93°C, Pulse Width  
C
V
RGM  
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to  
+110  
Device  
MCR106–6  
MCR106–8  
Package  
TO225AA  
TO225AA  
Shipping  
500/Box  
500/Box  
T
–40 to  
+150  
°C  
stg  
(2)  
Mounting Torque  
—
6.0  
in. lb.  
(1) V  
DRM  
and V  
for all types can be applied on a continuous basis. Ratings  
RRM  
Preferred devices are recommended choices for future use  
and best overall value.  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
(2) Torque rating applies with use of compression washer (B52200-F006 or  
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower  
case-to-sink thermal resistance. Anode lead and heatsink contact pad are  
common. (See AN209B). For soldering purposes (either terminal connection  
or device mounting), soldering temperatures shall not exceed +200°C. For  
optimum results, an activated flux (oxide removing) is recommended.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 3  
MCR106/D  
1234

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与MCR106-8相关器件

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MCR106-8-1 MOTOROLA

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 		4A, 600V, SCR, TO-225AA
MCR106-8-11 MOTOROLA

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 		Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-12 MOTOROLA

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 		Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-2 MOTOROLA

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 		4A, 600V, SCR, TO-225AA
MCR106-8-3 MOTOROLA

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 		Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-5 MOTOROLA

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 		4A, 600V, SCR, TO-225AA
MCR106-8G ONSEMI

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 		Sensitive Gate Silicon Controlled Rectifiers
MCR106-8G LITTELFUSE

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 		此硅控整流器PNPN设备专为高容量消费应用设计，例如温度、光线和速度控制；过程和远程控制；
MCR106-8-T60-K UTC

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 		Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-126, TO-
MCR106-8-VA MOTOROLA

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