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MCR106-8-VE PDF预览

MCR106-8-VE

更新时间: 2024-11-21 13:02:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
4页 97K
描述
4A, 600V, SCR, TO-225AA

MCR106-8-VE 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.7Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:1 V
最大维持电流:5 mAJEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:4 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:600 V
重复峰值反向电压:600 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SCRBase Number Matches:1

MCR106-8-VE 数据手册

 浏览型号MCR106-8-VE的Datasheet PDF文件第2页浏览型号MCR106-8-VE的Datasheet PDF文件第3页浏览型号MCR106-8-VE的Datasheet PDF文件第4页 
Order this document  
by MCR106/D  
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
*Motorola preferred devices  
except MCR106–3  
PNPN devices designed for high volume consumer applications such as  
temperature, light and speed control; process and remote control, and warning  
systems where reliability of operation is important.  
SCRs  
Glass-Passivated Surface for Reliability and Uniformity  
Power Rated at Economical Prices  
Practical Level Triggering and Holding Characteristics  
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
4 AMPERES RMS  
60 thru 600 VOLTS  
G
K
A
A
G
A
CASE 77-08  
(TO-225AA)  
STYLE 2  
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Forward and Reverse Blocking Voltage  
(T = 110°C, R = 1 kΩ)  
V
Volts  
DRM  
and  
J
GK  
MCR106-2  
V
RRM  
60  
MCR106-3  
MCR106-4  
MCR106-6  
MCR106-8  
100  
200  
400  
600  
RMS Forward Current  
(All Conduction Angles)  
I
4
Amps  
Amps  
T(RMS)  
Average Forward Current  
I
2.55  
T(AV)  
T
T
A
= 93°C  
= 30°C  
C
or  
Peak Non-repetitive Surge Current  
I
25  
Amps  
TSM  
(1/2 Cycle, 60 Hz, T = –40 to +110°C)  
J
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
2.6  
Peak Gate Power  
P
0.5  
0.1  
0.2  
6
Watt  
Watt  
Amp  
Volts  
°C  
GM  
Average Gate Power  
P
G(AV)  
Peak Forward Gate Current  
Peak Reverse Gate Voltage  
Operating Junction Temperature Range  
I
GM  
V
RGM  
T
–40 to +110  
J
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;  
RRM  
(cont.)  
DRM  
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995  

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