Datasheet > MCR106-7

MCR106-7

更新时间： 2024-11-22 01:11:51

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	237K
描述
SILICON CONTROLLED RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR106-7 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MCR106 SERIES

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage⁽¹⁾

(T_J= -40 to +110°C, sine wave, 50 to 60Hz, gate open)

MCR106-1

MCR106-2

MCR106-3

MCR106-4

MCR106-5

MCR106-6

MCR106-7

MCR106-8

V_DRM

V_RRM

100

200

300

400

500

600

On-state RMS current (180° conduction angles, T_C= 93°C)

Average on-state current (180° conduction angles, T_C= 93°C)

I_T(RMS)

I_T(AV)

4.0

2.55

Peak non-repetitive surge current

I_TSM

(half-cycle, sine wave, 60Hz, T_J= 110°C)

2.6

0.5

0.1

0.2

Circuit fusing consideration (t = 8.3ms)

I²t

P_GM

A²s

Forward peak gate power (pulse width ≤ 1.0µs, T_C= 93°C)

Forward average gate power (t = 8.3ms, T_C= 93°C)

Forward peak gate current (pulse width ≤ 1.0µs, T_C= 93°C)

P_G(AV)

I_GM

Peak reverse gate voltage

V_RGM

(pulse width ≤ 1.0µs, T_C= 93°C)

6.0

Operating junction temperature range

Storage temperature range

Mounting torque⁽²⁾

T_J

T_stg

-40 to +110

-40 to +150

6.0

°C

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and

heatsink contact pad are common. For soldering purposes, soldering temperatures should not exceed +200°C. For optimum results, an activated flux is recommended.

THERMAL CHARACTERISTICS

Characteristic

Symbol

R_ӨJC

Maximum

Unit

°C/W

Thermal resistance, junction to case

Thermal resistance, junction to ambient

3.0

R_ӨJA

Lead solder temperature

T_L

°C

(lead length ≥ 1/8” from case, 10s max)

260

ELECTRICAL CHARACTERISTICS (T_C= 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak forward or reverse blocking current

(V_AK= Rated V_DRMor V_RRM, R_GK= 1000Ω)

T_C= 25°C

I_DRM,

I_RRM

µA

T_C= 110°C

200

ON CHARACTERISTICS

Peak forward on-state voltage⁽³⁾

V_TM

(I_TM= 4.0A peak)

2.0

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130115

12 3

中文翻译

下载PDF

与MCR106-7相关器件

型号	品牌	获取价格	描述	数据表
MCR106-8	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers
MCR106-8	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR106-8	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIERS
MCR106-8-1	MOTOROLA	获取价格	4A, 600V, SCR, TO-225AA
MCR106-8-11	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-12	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-2	MOTOROLA	获取价格	4A, 600V, SCR, TO-225AA
MCR106-8-3	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-5	MOTOROLA	获取价格	4A, 600V, SCR, TO-225AA
MCR106-8G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers

与MCR106-7相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR106-7

MCR106-7 数据手册

与MCR106-7相关器件

与MCR106-7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR106-7

MCR106-7 数据手册

与MCR106-7相关器件

与MCR106-7相关文章

您还可以找

您在本页遇到什么问题？