Datasheet > MCR106-8

MCR106-8

更新时间： 2024-11-19 02:54:47

品牌	Logo	应用领域
DIGITRON		局域网栅栅极
页数	文件大小	规格书
3页	237K
描述
SILICON CONTROLLED RECTIFIERS

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中文翻译

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MCR106-8 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MCR106 SERIES

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage⁽¹⁾

(T_J= -40 to +110°C, sine wave, 50 to 60Hz, gate open)

MCR106-1

MCR106-2

MCR106-3

MCR106-4

MCR106-5

MCR106-6

MCR106-7

MCR106-8

V_DRM

V_RRM

100

200

300

400

500

600

On-state RMS current (180° conduction angles, T_C= 93°C)

Average on-state current (180° conduction angles, T_C= 93°C)

I_T(RMS)

I_T(AV)

4.0

2.55

Peak non-repetitive surge current

I_TSM

(half-cycle, sine wave, 60Hz, T_J= 110°C)

2.6

0.5

0.1

0.2

Circuit fusing consideration (t = 8.3ms)

I²t

P_GM

A²s

Forward peak gate power (pulse width ≤ 1.0µs, T_C= 93°C)

Forward average gate power (t = 8.3ms, T_C= 93°C)

Forward peak gate current (pulse width ≤ 1.0µs, T_C= 93°C)

P_G(AV)

I_GM

Peak reverse gate voltage

V_RGM

(pulse width ≤ 1.0µs, T_C= 93°C)

6.0

Operating junction temperature range

Storage temperature range

Mounting torque⁽²⁾

T_J

T_stg

-40 to +110

-40 to +150

6.0

°C

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and

heatsink contact pad are common. For soldering purposes, soldering temperatures should not exceed +200°C. For optimum results, an activated flux is recommended.

THERMAL CHARACTERISTICS

Characteristic

Symbol

R_ӨJC

Maximum

Unit

°C/W

Thermal resistance, junction to case

Thermal resistance, junction to ambient

3.0

R_ӨJA

Lead solder temperature

T_L

°C

(lead length ≥ 1/8” from case, 10s max)

260

ELECTRICAL CHARACTERISTICS (T_C= 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak forward or reverse blocking current

(V_AK= Rated V_DRMor V_RRM, R_GK= 1000Ω)

T_C= 25°C

I_DRM,

I_RRM

µA

T_C= 110°C

200

ON CHARACTERISTICS

Peak forward on-state voltage⁽³⁾

V_TM

(I_TM= 4.0A peak)

2.0

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130115

12 3

中文翻译

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与MCR106-8相关器件

型号	品牌	获取价格	描述	数据表
MCR106-8-1	MOTOROLA	获取价格	4A, 600V, SCR, TO-225AA
MCR106-8-11	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-12	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-2	MOTOROLA	获取价格	4A, 600V, SCR, TO-225AA
MCR106-8-3	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-225AA
MCR106-8-5	MOTOROLA	获取价格	4A, 600V, SCR, TO-225AA
MCR106-8G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers
MCR106-8G	LITTELFUSE	获取价格	此硅控整流器PNPN设备专为高容量消费应用设计，例如温度、光线和速度控制；过程和远程控制；
MCR106-8-T60-K	UTC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-126, TO-
MCR106-8-VA	MOTOROLA	获取价格	暂无描述

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