Datasheet > MCP87018_13

MCP87018_13

更新时间： 2024-11-26 01:18:43

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描述
High-Speed N-Channel Power MOSFET

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MCP87018_13 数据手册

MCP87018

High-Speed N-Channel Power MOSFET

Features:

Description:

• Low Drain-to-Source On Resistance (R_DS(ON)

)

The MCP87018 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package. Advanced

packaging and silicon processing technologies allow

the MCP87018 to achieve a low Q_Gfor a given R_DS(on)

value, resulting in a low Figure of Merit (FOM).

Combined with low R_G, the low FOM of the MCP87018

allows high-efficiency power conversion with reduced

switching and conduction losses.

• Low Total Gate Charge (Q_G) and Gate-to-Drain

Charge (Q_GD

)

• Low Series Gate Resistance (R_G)

• Fast Switching

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High-Efficiency Power Management in Servers,

Networking and Automotive Applications

Package Type

PDFN 5 x 6

S 1

Product Summary Table: Unless otherwise indicated, T = +25°C.

Parameters

Operating Characteristics

Sym.

Min. Typ. Max. Units

Conditions

Drain-to-Source Breakdown Voltage

—

= 0V, I = 250 µA

DSS

Gate-to-Source Threshold Voltage

Drain-to-Source On Resistance

1.3

1.6

= V , I = 250 µA

GS D

GS(TH)

DS(ON)

—

1.8

1.5

2.2

1.9

mΩ

= 4.5V, I = 25A

= 10V, I = 25A

Total Gate Charge

32.5

= 12.5V, I = 25A, V = 4.5V

D GS

Gate-to-Drain Charge

Series Gate Resistance

—

= 12.5V, I = 25A

DS D

1.5

Ω

—

Thermal Characteristics

Thermal Resistance Junction-to-X

—

°C/W Note 1

°C/W Note 2

θJX

Thermal Resistance Junction-to-Case

1.0

θJC

Note 1:

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of 2 oz.

θJX

copper. This characteristic is dependent on user’s board design.

is determined using JEDEC 51-14 Method. This characteristic is determined by design.

θJC

 2013 Microchip Technology Inc.

DS20002329B-page 1

12 3 4 5 6 7...16

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