Datasheet > 存储 > SRAM> MCM69P735ZP3.5R

MCM69P735ZP3.5R

更新时间： 2024-02-29 03:05:25

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		存储内存集成电路静态存储器
页数	文件大小	规格书
16页	187K
描述
128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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技术参数
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MCM69P735ZP3.5R 技术参数

生命周期：	Obsolete	包装说明：	BGA,
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Is Samacsys：	N	最长访问时间：	3.5 ns
JESD-30 代码：	R-PBGA-B119	长度：	22 mm
内存密度：	4718592 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	36	功能数量：	1
端口数量：	1	端子数量：	119
字数：	131072 words	字数代码：	128000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	128KX36
输出特性：	3-STATE	可输出：	YES
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	2.4 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	MOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1.27 mm	端子位置：	BOTTOM
宽度：	14 mm	Base Number Matches：	1

MCM69P735ZP3.5R 数据手册

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by MCM69P735/D

SEMICONDUCTOR TECHNICAL DATA

MCM69P735

Product Preview

128K x 36 Bit Pipelined

BurstRAM Synchronous

Fast Static RAM

The MCM69P735 is a 4M bit synchronous fast static RAM designed to provide

a burstable, high performance, secondary cache for the PowerPC and other

high performance microprocessors. It is organized as 128K words of 36 bits

each. This device integrates input registers, an output register, a 2–bit address

counter, andahighspeedSRAMontoasinglemonolithiccircuitforreducedparts

count in cache data RAM applications. Synchronous design allows precise cycle

control with the use of an external clock (K).

ZP PACKAGE

PBGA

CASE 999–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable(G) and linear burst order (LBO) are clock (K) controlled through positive–

edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM69P735 (burst sequence

operates in linear or interleaved mode dependent upon the state of LBO) and

controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls

DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte

writes SBx are asserted with SW. All bytes are written if either SGW is asserted

or if all SBx and SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggeredoutput register and then released to the output buffers at the next

rising edge of clock (K).

The MCM69P735 operates from a 3.3 V core power supply and all outputs

operate on a 3.3 V or 2.5 V power supply. All inputs and outputs are JEDEC stan-

dard JESD8–5 compatible.

•

MCM69P735 Speed Options

Pipelined

Speed

Setup

0.5 ns

Hold

1 ns

Pkg

KHQV

KHKH

200 MHz

180 MHz

166 MHz

5 ns

2.5 ns

3.0 ns

3.5 ns

475 mA

450 mA

425 mA

PBGA

5.5 ns

6 ns

•

3.3 V + 10%, – 5% Core Power Supply, Operates with a 3.3 V or 2.5 V I/O

Supply

•

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Single–Cycle Deselect Timing

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

PB1 Version 2.0 Compatible

JEDEC Standard 119–Pin PBGA Package

BurstRAM is a trademark of Motorola, Inc.

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.

6/10/97

Motorola, Inc. 1997

MOTOROLA FAST SRAM

MCM69P735

12 3 4 5 6 7...16

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与MCM69P735ZP3.5R相关器件

型号	品牌	获取价格	描述	数据表
MCM69P735ZP3R	MOTOROLA	获取价格	128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P736	MOTOROLA	获取价格	128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P736ZP4	MOTOROLA	获取价格	128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P736ZP4R	MOTOROLA	获取价格	128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P737	MOTOROLA	获取价格	128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P737TQ3.0R	MOTOROLA	获取价格	Cache SRAM, 128KX36, 3ns, CMOS, PQFP100, TQFP-100
MCM69P737TQ3.2	MOTOROLA	获取价格	128KX36 CACHE SRAM, 3.2ns, PQFP100, TQFP-100
MCM69P737TQ3.2R	MOTOROLA	获取价格	Cache SRAM, 128KX36, 3.2ns, CMOS, PQFP100, TQFP-100
MCM69P737TQ3.5	MOTOROLA	获取价格	128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P737TQ3.5R	MOTOROLA	获取价格	128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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