Datasheet > 存储 > SRAM> MCM63F733ATQ10R

MCM63F733ATQ10R

更新时间： 2024-10-01 22:05:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		存储内存集成电路静态存储器
页数	文件大小	规格书
16页	238K
描述
128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM

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技术参数
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MCM63F733ATQ10R 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.65
Is Samacsys：	N	最长访问时间：	10 ns
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e0
长度：	20 mm	内存密度：	4194304 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	32
功能数量：	1	端口数量：	1
端子数量：	100	字数：	131072 words
字数代码：	128000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	128KX32	输出特性：	3-STATE
可输出：	YES	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
宽度：	14 mm	Base Number Matches：	1

MCM63F733ATQ10R 数据手册

Order this document

by MCM63F733A/D

SEMICONDUCTOR TECHNICAL DATA

MCM63F733A

Advance Information

128K x 32 Bit Flow–Through

BurstRAM Synchronous

Fast Static RAM

The MCM63F733A is a 4M–bit synchronous fast static RAM designed to pro-

vide a burstable, high performance, secondary cache for the PowerPC and

other high performance microprocessors. It is organized as 128K words of 32

bits each, fabricated with high performance silicon gate CMOS technology.

This device integrates input registers, a 2–bit address counter, and high speed

SRAM onto a single monolithic circuit for reduced parts count in cache data

RAM applications. Synchronous design allows precise cycle control with the

use of an external clock (K). CMOS circuitry reduces the overall power con-

sumption of the integrated functions for greater reliability.

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G) and Linear Burst Order (LBO) are clock (K) controlled through

positive–edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63F733A (burst sequence

operates in linear or interleaved mode dependent upon state of LBO) and con-

trolled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls

DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte

writes SBx are asserted with SW. All bytes are written if either SGW is asserted

or if all SBx and SW are asserted.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

The MCM63F733A operates from a 3.3 V core power supply and all outputs

operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are JEDEC

Standard JESD8–5 compatible.

•

MCM63F733A–10 = 10 ns Access/13 ns Cycle (75 MHz)

MCM63F733A–11 = 11 ns Access/15 ns Cycle (66 MHz)

3.3 V + 10%/– 5% Core, Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

Single–Cycle Deselect

Sleep Mode (ZZ)

100–Pin TQFP Package

•

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 2

3/20/98

Motorola, Inc. 1998

MOTOROLA FAST SRAM

MCM63F733A

12 3 4 5 6 7...16

中文翻译

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与MCM63F733ATQ10R相关器件

型号	品牌	获取价格	描述	数据表
MCM63F733ATQ11	MOTOROLA	获取价格	128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F733ATQ11	NXP	获取价格	128KX32 CACHE SRAM, 11ns, PQFP100, TQFP-100
MCM63F733ATQ11R	MOTOROLA	获取价格	128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F733ATQ11R	NXP	获取价格	IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC
MCM63F733ATQ8.5	NXP	获取价格	IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC
MCM63F733ATQ8.5	MOTOROLA	获取价格	Cache SRAM, 128KX32, 8.5ns, CMOS, PQFP100, TQFP-100
MCM63F733ATQ8.5R	NXP	获取价格	128KX32 CACHE SRAM, 8.5ns, PQFP100, TQFP-100
MCM63F733ATQ9	MOTOROLA	获取价格	Cache SRAM, 128KX32, 9ns, CMOS, PQFP100, TQFP-100
MCM63F733ATQ9	NXP	获取价格	128KX32 CACHE SRAM, 9ns, PQFP100, TQFP-100
MCM63F733ATQ9R	NXP	获取价格	IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC

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