Datasheet > MCM63F737KZP11R

MCM63F737KZP11R

更新时间： 2024-11-11 11:05:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		内存集成电路静态存储器
页数	文件大小	规格书
20页	400K
描述
128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM

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MCM63F737KZP11R 数据手册

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM63F737K/D

MCM63F737K

MCM63F819K

Advance Information

128K x 36 and 256K x 18 Bit

Flow–Through BurstRAM

Synchronous Fast Static RAM

The MCM63F737K and MCM63F819K are 4M–bit synchronous fast static

RAMs designedtoprovideaburstable, highperformance, secondarycache. The

MCM63F737K (organized as 128K words by 36 bits) and the MCM63F819K

(organized as 256K words by 18 bits) integrate input registers, a 2–bit address

counter, and high speed SRAM onto a single monolithic circuit for reduced parts

count in cache data RAM applications. Synchronous design allows precise cycle

control with the use of an external clock (K).

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable(G), sleepmode(ZZ), andlinearburstorder(LBO)areclock(K)controlled

through positive–edge–triggered noninverting registers.

ZP PACKAGE

PBGA

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63F737K and MCM63F819K

(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

CASE 999–02

Synchronous byte write (SBx), synchronous global write (SGW), and

synchronous write enable (SW) are provided to allow writes to either individual

bytes or to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa,

SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx

are asserted with SW. All bytes are written if either SGW is asserted or if all SBx

and SW are asserted.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

TheMCM63F737KandMCM63F819Koperatefroma3.3Vcorepowersupply

and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs

are JEDEC standard JESD8–5 compatible.

•

MCM63F737K/MCM63F819K–8.5 = 8.5 ns Access

MCM63F737K/MCM63F819K–9 ns = 9 ns Access

MCM63F737K/MCM63F819K–11 ns = 11 ns Access

3.3 V +10%, –5% Core Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Single–Cycle Deselect Timing

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

Sleep Mode (ZZ)

JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages

•

This document contains information on a new product. Specifications and information herein are subject to change without notice.

10/1/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

MCM63F737K•MCM63F819K

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...20

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与MCM63F737KZP11R相关器件

型号	品牌	获取价格	描述	数据表
MCM63F737KZP8.5	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP8.5	NXP	获取价格	128KX36 CACHE SRAM, 8.5ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP8.5R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP8.5R	NXP	获取价格	128KX36 CACHE SRAM, 8.5ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP9	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP9	NXP	获取价格	128KX36 CACHE SRAM, 9ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP9R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737TQ10	MOTOROLA	获取价格	Cache SRAM, 128KX36, 10ns, CMOS, PQFP100, TQFP-100
MCM63F737TQ10R	MOTOROLA	获取价格	128KX36 CACHE SRAM, 10ns, PQFP100, TQFP-100
MCM63F737TQ10R	NXP	获取价格	128KX36 CACHE SRAM, 10ns, PQFP100, TQFP-100

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