Datasheet > MCM63F737KZP11

MCM63F737KZP11

更新时间： 2024-11-11 20:28:19

品牌	Logo	应用领域
恩智浦 - NXP		静态存储器内存集成电路
页数	文件大小	规格书
20页	397K
描述
128KX36 CACHE SRAM, 11ns, PBGA119, PLASTIC, BGA-119

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MCM63F737KZP11 技术参数

生命周期：	Transferred	零件包装代码：	BGA
包装说明：	BGA,	针数：	119
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.61
最长访问时间：	11 ns	其他特性：	FLOW-THROUGH ARCHITECTURE
JESD-30 代码：	R-PBGA-B119	长度：	22 mm
内存密度：	4718592 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	36	功能数量：	1
端子数量：	119	字数：	131072 words
字数代码：	128000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	128KX36	封装主体材料：	PLASTIC/EPOXY
封装代码：	BGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	2.4 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	1.27 mm
端子位置：	BOTTOM	宽度：	14 mm
Base Number Matches：	1

MCM63F737KZP11 数据手册

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM63F737K/D

MCM63F737K

MCM63F819K

Advance Information

128K x 36 and 256K x 18 Bit

Flow–Through BurstRAM

Synchronous Fast Static RAM

The MCM63F737K and MCM63F819K are 4M–bit synchronous fast static

RAMs designedtoprovideaburstable, highperformance, secondarycache. The

MCM63F737K (organized as 128K words by 36 bits) and the MCM63F819K

(organized as 256K words by 18 bits) integrate input registers, a 2–bit address

counter, and high speed SRAM onto a single monolithic circuit for reduced parts

count in cache data RAM applications. Synchronous design allows precise cycle

control with the use of an external clock (K).

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable(G), sleepmode(ZZ), andlinearburstorder(LBO)areclock(K)controlled

through positive–edge–triggered noninverting registers.

ZP PACKAGE

PBGA

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63F737K and MCM63F819K

(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

CASE 999–02

Synchronous byte write (SBx), synchronous global write (SGW), and

synchronous write enable (SW) are provided to allow writes to either individual

bytes or to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa,

SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx

are asserted with SW. All bytes are written if either SGW is asserted or if all SBx

and SW are asserted.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

TheMCM63F737KandMCM63F819Koperatefroma3.3Vcorepowersupply

and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs

are JEDEC standard JESD8–5 compatible.

•

MCM63F737K/MCM63F819K–8.5 = 8.5 ns Access

MCM63F737K/MCM63F819K–9 ns = 9 ns Access

MCM63F737K/MCM63F819K–11 ns = 11 ns Access

3.3 V +10%, –5% Core Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Single–Cycle Deselect Timing

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

Sleep Mode (ZZ)

JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages

•

This document contains information on a new product. Specifications and information herein are subject to change without notice.

10/1/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

MCM63F737K•MCM63F819K

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...20

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与MCM63F737KZP11相关器件

型号	品牌	获取价格	描述	数据表
MCM63F737KZP11R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP11R	NXP	获取价格	128KX36 CACHE SRAM, 11ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP8.5	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP8.5	NXP	获取价格	128KX36 CACHE SRAM, 8.5ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP8.5R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP8.5R	NXP	获取价格	128KX36 CACHE SRAM, 8.5ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP9	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP9	NXP	获取价格	128KX36 CACHE SRAM, 9ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP9R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737TQ10	MOTOROLA	获取价格	Cache SRAM, 128KX36, 10ns, CMOS, PQFP100, TQFP-100

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