Datasheet > MCM63F737KTQ8.5

MCM63F737KTQ8.5

更新时间： 2024-11-11 20:28:19

品牌	Logo	应用领域
恩智浦 - NXP		静态存储器内存集成电路
页数	文件大小	规格书
20页	397K
描述
128KX36 CACHE SRAM, 8.5ns, PQFP100, PLASTIC, TQFP-100

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MCM63F737KTQ8.5 技术参数

生命周期：	Transferred	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.61
Is Samacsys：	N	最长访问时间：	8.5 ns
其他特性：	FLOW-THROUGH ARCHITECTURE	JESD-30 代码：	R-PQFP-G100
长度：	20 mm	内存密度：	4718592 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	36
功能数量：	1	端子数量：	100
字数：	131072 words	字数代码：	128000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	128KX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
宽度：	14 mm	Base Number Matches：	1

MCM63F737KTQ8.5 数据手册

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM63F737K/D

MCM63F737K

MCM63F819K

Advance Information

128K x 36 and 256K x 18 Bit

Flow–Through BurstRAM

Synchronous Fast Static RAM

The MCM63F737K and MCM63F819K are 4M–bit synchronous fast static

RAMs designedtoprovideaburstable, highperformance, secondarycache. The

MCM63F737K (organized as 128K words by 36 bits) and the MCM63F819K

(organized as 256K words by 18 bits) integrate input registers, a 2–bit address

counter, and high speed SRAM onto a single monolithic circuit for reduced parts

count in cache data RAM applications. Synchronous design allows precise cycle

control with the use of an external clock (K).

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable(G), sleepmode(ZZ), andlinearburstorder(LBO)areclock(K)controlled

through positive–edge–triggered noninverting registers.

ZP PACKAGE

PBGA

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63F737K and MCM63F819K

(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

CASE 999–02

Synchronous byte write (SBx), synchronous global write (SGW), and

synchronous write enable (SW) are provided to allow writes to either individual

bytes or to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa,

SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx

are asserted with SW. All bytes are written if either SGW is asserted or if all SBx

and SW are asserted.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

TheMCM63F737KandMCM63F819Koperatefroma3.3Vcorepowersupply

and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs

are JEDEC standard JESD8–5 compatible.

•

MCM63F737K/MCM63F819K–8.5 = 8.5 ns Access

MCM63F737K/MCM63F819K–9 ns = 9 ns Access

MCM63F737K/MCM63F819K–11 ns = 11 ns Access

3.3 V +10%, –5% Core Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Single–Cycle Deselect Timing

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

Sleep Mode (ZZ)

JEDEC Standard 100–Pin TQFP and 119–Pin PBGA Packages

•

This document contains information on a new product. Specifications and information herein are subject to change without notice.

10/1/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

MCM63F737K•MCM63F819K

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...20

中文翻译

下载PDF

与MCM63F737KTQ8.5相关器件

型号	品牌	获取价格	描述	数据表
MCM63F737KTQ8.5R	NXP	获取价格	128KX36 CACHE SRAM, 8.5ns, PQFP100, PLASTIC, TQFP-100
MCM63F737KTQ8.5R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KTQ9	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KTQ9R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KTQ9R	NXP	获取价格	128KX36 CACHE SRAM, 9ns, PQFP100, PLASTIC, TQFP-100
MCM63F737KZP11	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP11	NXP	获取价格	128KX36 CACHE SRAM, 11ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP11R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs
MCM63F737KZP11R	NXP	获取价格	128KX36 CACHE SRAM, 11ns, PBGA119, PLASTIC, BGA-119
MCM63F737KZP8.5	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow–Through Burs

与MCM63F737KTQ8.5相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63F737KTQ8.5

MCM63F737KTQ8.5 技术参数

MCM63F737KTQ8.5 数据手册

与MCM63F737KTQ8.5相关器件

与MCM63F737KTQ8.5相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM63F737KTQ8.5

MCM63F737KTQ8.5 技术参数

MCM63F737KTQ8.5 数据手册

与MCM63F737KTQ8.5相关器件

与MCM63F737KTQ8.5相关文章

您还可以找

您在本页遇到什么问题？