Datasheet > MCC500-14IO1

MCC500-14IO1

更新时间： 2024-11-05 14:53:15

品牌	Logo	应用领域
IXYS		局域网栅栅极
页数	文件大小	规格书
11页	445K
描述
Silicon Controlled Rectifier, 1294A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, MODULE-7

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MCC500-14IO1 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Is Samacsys：	N	Base Number Matches：	1

MCC500-14IO1 数据手册

Date: 17.03.2005

IXYS

Data Sheet Issue: 2

Thyristor/Diode Modules M## 500

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MCC

MCD

MDC

MCA

MCK

MCDA

MDCA

1200

1400

1600

1800

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

MAXIMUM

LIMITS

1200-1800

1300-1900

VOLTAGE RATINGS

UNITS

V_DRM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

V_DSM

V_RRM

V_RSM

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

Maximum average on-state current, T_C= 89°C ²⁾

Maximum average on-state current. T_C= 85°C ²⁾

500

545

Maximum average on-state current. T_C= 100°C ²⁾

376

I_T(RMS)MNominal RMS on-state current, T_C= 55°C ²⁾

1294

1029

16.5

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_C= 55°C

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM≤ 10V ³⁾

A²s

A/µs

18.2

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

1.36×10⁶

1.66×10⁶

150

I²t

I²t capacity for fusing t_p= 10 ms, V_RM≤ 10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁴⁾

(di/dt)_cr

Critical rate of rise of on-state current (non-repetitive) ⁴⁾

Peak reverse gate voltage

300

V_RGM

P_G(AV)

P_GM

Mean forward gate power

Peak forward gate power

Isolation Voltage ⁵⁾

V_ISOL

T_{Vj op}

T_stg

3500

-40 to +125

-40 to +150

Operating temperature range

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for Tv_jbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 125°C T_vjinitial.

4) V_D= 67% V_DRM, I_FG= 2 A, t_r≤ 0.5µs, T_C= 125°C.

5) AC RMS voltage, 50 Hz, 1min test

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 1 of 11

March, 2005

12 3 4 5 6 7...11

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与MCC500-14IO1相关器件

型号	品牌	获取价格	描述	数据表
MCC500-14O1	IXYS	获取价格	Silicon Controlled Rectifier,
MCC500-16IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 1294A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE
MCC500-18IO1	IXYS	获取价格	Silicon Controlled Rectifier, 1294A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 2 Element, MODULE
MCC500-18IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 1294A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 2 Element, MODULE
MCC500-20I1	IXYS	获取价格	Silicon Controlled Rectifier,
MCC500-20IO1	LITTELFUSE	获取价格	Trigger Device,
MCC500-20O1	IXYS	获取价格	Silicon Controlled Rectifier,
MCC500-22I1	IXYS	获取价格	Silicon Controlled Rectifier,
MCC500-22IO1	LITTELFUSE	获取价格	Trigger Device,
MCC500-22O1	IXYS	获取价格	Silicon Controlled Rectifier,

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