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MCC50-22F PDF预览

MCC50-22F

更新时间： 2024-11-22 14:53:51
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MIS Chip Capacitors 50 V & 100 V

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MCC50-22F 数据手册

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MIS Chip Capacitors  
50 V & 100 V  
MCCx Series  
Rev. V1  
Features  
•
Dual Insulating Layer (Nitride-Oxide) for  
Maximum Reliability  
•
•
•
•
Low Loss: 0.04 dB in a 50 Ω System  
Maximum Pad Area for Ribbon or Multiple Bonds  
Very Low Temperature Coefficient  
RoHS* Compliant  
Applications  
50 V Electrical Specifications:  
IR = 10 µA, TA = +25°C  
•
•
•
DC Blocking  
Bypass  
Tuning  
Junction  
Available  
Outline  
Part #  
Capacitance  
VR = 0 V, 1 MHz  
Description  
20  
C
F
The MIS (metal-insulating layer-silicon) chip  
capacitor are devices that have a very high Q and  
small size for use in microwave hybrid circuit  
applications. Large rectangular contacts are  
supplied on most units with the periphery of the  
contact being typically 2 mils from the edge allowing  
wire or ribbon bonding near the edge for the lowest  
practical inductance.  
25  
MCC50  
50  
D
G
100  
100 V Electrical Specifications:  
IR = 10 µA, TA = +25°C  
The dielectric layer is composed of a thermally  
grown silicon dioxide over which a thicker layer of  
silicon nitride is deposited. This layer is carried out to  
the edge of the chip. The end result is a capacitor  
having a thin, high breakdown dielectric resulting in  
a high capacitance per unit area. This dual insulating  
layer exhibits a low temperature coefficient, very  
high insulation resistance and much lower insertion  
loss at microwave frequencies than porcelain  
capacitors. These MIS devices (sometimes referred  
to as MNOS) exhibit long term stability under bias  
conditions at high temperatures (as compared to the  
earlier MOS technology) making them suitable for  
high reliability applications.  
Junction  
Capacitance  
VR = 0 V, 1 MHz  
Available  
Outline  
Part #  
1
A
B
C
B
B
D
C
2
5
MCC100  
10  
15  
20  
25  
These MIS chip capacitors provide much improved  
performance over other types in hybrid microwave  
circuits. They provide low loss in supply decoupling  
circuits and GaAs FET transistor source bypass  
(providing more gain per stage). They can also be  
used as tuning elements in various filters and  
matching networks. Detector diodes and transistors  
can be mounted on them also to provide DC  
isolation and a tuning or bypass capacitor to ground.  
Switch and comb generator performance is  
significantly improved using MIS capacitors. There  
are no resonance problems associated with MIS  
devices.  
Ordering Information  
MCCx-y-z1  
100 piece waffle pack  
1. x = voltage (either 50 or 100), y = capacitance value,  
z = available outline.  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0022647  
123

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