Datasheet > MCC501-18IO1

MCC501-18IO1

更新时间： 2024-11-07 06:48:55

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Trigger Device,

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数据手册

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MCC501-18IO1 数据手册

Date: 05.03.2008

IXYS

Data Sheet Issue: 3

Thyristor/Diode Modules M## 501

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MCC

MCD

MDC

1200

1400

1600

1800

501-12io1

501-14io1

501-16io1

501-18io1

501-12io1

501-14io1

501-16io1

501-18io1

501-12io1

501-14io1

501-16io1

501-18io1

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

V_DRM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

1200-1800

1300-1900

1200-1800

1300-1900

V_DSM

V_RRM

V_RSM

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)MNominal RMS on-state current, T_C= 55°C ²⁾

Maximum average on-state current, T_C= 85°C ²⁾

503

Maximum average on-state current. T_C= 100°C ²⁾

347

1195

985

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_C= 55°C

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM≤ 10V ³⁾

14.5

A²s

A/µs

16.0

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

1.05×10⁶

1.28×10⁶

200

I²t

I²t capacity for fusing t_p= 10 ms, V_RM≤ 10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁴⁾

(di/dt)_cr

Critical rate of rise of on-state current (non-repetitive) ⁴⁾

Peak reverse gate voltage

400

V_RGM

P_G(AV)

P_GM

Mean forward gate power

Peak forward gate power

Isolation Voltage ⁵⁾

V_ISOL

T_{vj op}

T_stg

3000

-40 to +125

-40 to +50

Operating temperature range

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for Tv_jbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 125°C T_vjinitial.

4) V_D= 67% V_DRM, I_FG= 2 A, t_r≤ 0.5µs, T_C= 125°C.

5) AC RMS voltage, 50 Hz, 1min test

Rating Report. Types M##501-12io1 and M##501-18io1 Issue 3

Page 1 of 10

March, 2008

12 3 4 5 6 7...10

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