Datasheet > MCC50-20C

MCC50-20C

更新时间： 2024-09-17 14:53:51

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描述
MIS Chip Capacitors 50 V & 100 V

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MCC50-20C 数据手册

MIS Chip Capacitors

50 V & 100 V

MCCx Series

Rev. V1

Features

•

Dual Insulating Layer (Nitride-Oxide) for

Maximum Reliability

•

Low Loss: 0.04 dB in a 50 Ω System

Maximum Pad Area for Ribbon or Multiple Bonds

Very Low Temperature Coefficient

RoHS* Compliant

Applications

50 V Electrical Specifications:

I_R= 10 µA, T_A= +25°C

•

DC Blocking

Bypass

Tuning

Junction

Available

Outline

Part #

Capacitance

V_R= 0 V, 1 MHz

Description

The MIS (metal-insulating layer-silicon) chip

capacitor are devices that have a very high Q and

small size for use in microwave hybrid circuit

applications. Large rectangular contacts are

supplied on most units with the periphery of the

contact being typically 2 mils from the edge allowing

wire or ribbon bonding near the edge for the lowest

practical inductance.

MCC50

100

100 V Electrical Specifications:

I_R= 10 µA, T_A= +25°C

The dielectric layer is composed of a thermally

grown silicon dioxide over which a thicker layer of

silicon nitride is deposited. This layer is carried out to

the edge of the chip. The end result is a capacitor

having a thin, high breakdown dielectric resulting in

a high capacitance per unit area. This dual insulating

layer exhibits a low temperature coefficient, very

high insulation resistance and much lower insertion

loss at microwave frequencies than porcelain

capacitors. These MIS devices (sometimes referred

to as MNOS) exhibit long term stability under bias

conditions at high temperatures (as compared to the

earlier MOS technology) making them suitable for

high reliability applications.

Junction

Capacitance

V_R= 0 V, 1 MHz

Available

Outline

Part #

MCC100

These MIS chip capacitors provide much improved

performance over other types in hybrid microwave

circuits. They provide low loss in supply decoupling

circuits and GaAs FET transistor source bypass

(providing more gain per stage). They can also be

used as tuning elements in various filters and

matching networks. Detector diodes and transistors

can be mounted on them also to provide DC

isolation and a tuning or bypass capacitor to ground.

Switch and comb generator performance is

significantly improved using MIS capacitors. There

are no resonance problems associated with MIS

devices.

Ordering Information

MCCx-y-z¹

100 piece waffle pack

1. x = voltage (either 50 or 100), y = capacitance value,

z = available outline.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0022647

12 3

中文翻译

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与MCC50-20C相关器件

型号	品牌	获取价格	描述	数据表
MCC50-22F	MACOM	获取价格	MIS Chip Capacitors 50 V & 100 V
MCC50-50D	MACOM	获取价格	MIS Chip Capacitors 50 V & 100 V
MCC512-A	SLPOWER	获取价格	AC/DC CONVERTER 5V 12V 60W
MCC524-A	SLPOWER	获取价格	AC/DC CONVERTER 5V 24V 78W
MCC56	IXYS	获取价格	Thyristor Modules /Diode Modules
MCC56-06IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 100000mA I(T), 600V V(RRM),
MCC56-06IO1B	IXYS	获取价格	Silicon Controlled Rectifier, 100A I(T)RMS, 60000mA I(T), 600V V(DRM), 600V V(RRM), 2 Elem
MCC56-06IO8	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 100000mA I(T), 600V V(RRM),
MCC56-06IO8B	IXYS	获取价格	Silicon Controlled Rectifier, 100A I(T)RMS, 60000mA I(T), 600V V(DRM), 600V V(RRM), 2 Elem
MCC56-08IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 100000mA I(T), 800V V(RRM),

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