Datasheet > MCC501-18IO2

MCC501-18IO2

更新时间： 2024-11-05 19:28:43

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
10页	384K
描述
Silicon Controlled Rectifier

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MCC501-18IO2 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.62
Base Number Matches：	1

MCC501-18IO2 数据手册

Date: 29.09.2014

IXYS

Data Sheet Issue: 3

Thyristor/Diode Modules M## 501

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MCC

MCD

MDC

1200

1400

1600

1800

501-12io2

501-14io2

501-16io2

501-18io2

501-12io2

501-14io2

501-16io2

501-18io2

501-12io2

501-14io2

501-16io2

501-18io2

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

V_DRM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

1200-1800

1300-1900

1200-1800

1300-1900

V_DSM

V_RRM

V_RSM

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)MNominal RMS on-state current, T_C= 55°C ²⁾

Maximum average on-state current, T_C= 85°C ²⁾

503

347

Maximum average on-state current. T_C= 100°C ²⁾

1195

985

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_C= 55°C

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM10V ³⁾

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

14.5

A²s

A/µs

16.0

1.05×10⁶

1.28×10⁶

200

I²t

I²t capacity for fusing t_p= 10 ms, V_RM10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁴⁾

(di/dt)_cr

Critical rate of rise of on-state current (non-repetitive) ⁴⁾

400

V_RGM

P_G(AV)

P_GM

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

V_ISOL

T_{vj op}

T_stg

Isolation Voltage ⁵⁾

3000

-40 to +125

Operating temperature range

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for T_vjbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 125°C T_vjinitial.

4) V_D= 67% V_DRM, I_FG= 2 A, t_r 0.5µs, T_C= 125°C.

5) AC RMS voltage, 50 Hz, 1min test

Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3

Page 1 of 10

September, 2014

12 3 4 5 6 7...10

中文翻译

下载PDF

与MCC501-18IO2相关器件

型号	品牌	获取价格	描述	数据表
MCC501RX200TD0B	MOTOROLA	获取价格	SPECIALTY MICROPROCESSOR CIRCUIT, PBGA838, BGA-838
MCC501RX200TD0B	NXP	获取价格	IC,TELECOMM PROCESSOR,BGA,838PIN,CERAMIC
MCC50-20C	MACOM	获取价格	MIS Chip Capacitors 50 V & 100 V
MCC50-22F	MACOM	获取价格	MIS Chip Capacitors 50 V & 100 V
MCC50-50D	MACOM	获取价格	MIS Chip Capacitors 50 V & 100 V
MCC512-A	SLPOWER	获取价格	AC/DC CONVERTER 5V 12V 60W
MCC524-A	SLPOWER	获取价格	AC/DC CONVERTER 5V 24V 78W
MCC56	IXYS	获取价格	Thyristor Modules /Diode Modules
MCC56-06IO1	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 100000mA I(T), 600V V(RRM),
MCC56-06IO1B	IXYS	获取价格	Silicon Controlled Rectifier, 100A I(T)RMS, 60000mA I(T), 600V V(DRM), 600V V(RRM), 2 Elem