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MC74HCT125ADR2G PDF预览

MC74HCT125ADR2G

更新时间: 2024-11-18 11:07:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 159K
描述
Quad 3-State Noninverting Buffer with LSTTL Compatible Inputs

MC74HCT125ADR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP14,.25针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.48控制类型:ENABLE LOW
系列:HCT输入调节:STANDARD
JESD-30 代码:R-PDSO-G14JESD-609代码:e3
长度:8.65 mm负载电容(CL):50 pF
逻辑集成电路类型:OTHER DECODER/DRIVER最大I(ol):0.006 A
湿度敏感等级:1位数:4
功能数量:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
Prop。Delay @ Nom-Sup:27 ns传播延迟(tpd):27 ns
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):4.5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

MC74HCT125ADR2G 数据手册

 浏览型号MC74HCT125ADR2G的Datasheet PDF文件第2页浏览型号MC74HCT125ADR2G的Datasheet PDF文件第3页浏览型号MC74HCT125ADR2G的Datasheet PDF文件第4页浏览型号MC74HCT125ADR2G的Datasheet PDF文件第5页浏览型号MC74HCT125ADR2G的Datasheet PDF文件第6页浏览型号MC74HCT125ADR2G的Datasheet PDF文件第7页 
MC74HCT125A  
Quad 3-State Noninverting  
Buffer with LSTTL  
Compatible Inputs  
HighPerformance SiliconGate CMOS  
http://onsemi.com  
MARKING  
The MC74HCT125A is identical in pinout to the LS125. The device  
inputs are compatible with standard CMOS and LSTTL outputs.  
The MC74HCT125A noninverting buffer is designed to be used  
with 3state memory address drivers, clock drivers, and other  
busoriented systems. The devices have four separate output enables  
that are activelow.  
DIAGRAMS  
14  
1
PDIP14  
N SUFFIX  
CASE 646  
MC74HCT125AN  
AWLYYWWG  
14  
Features  
1
Output Drive Capability: 15 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
14  
Low Input Current: 1.0 mA  
SOIC14  
D SUFFIX  
CASE 751A  
HCT125AG  
AWLYWW  
14  
High Noise Immunity Characteristic of CMOS Devices  
In Compliance with the JEDEC Standard No. 7A Requirements  
Chip Complexity: 72 FETs or 18 Equivalent Gates  
These are PbFree Devices  
1
1
14  
HCT  
TSSOP14  
DT SUFFIX  
CASE 948G  
PIN ASSIGNMENT  
LOGIC DIAGRAM  
14  
125A  
ALYWG  
OE1  
A1  
1
2
14  
13 OE4  
12  
V
ActiveLow Output Enables  
1
CC  
G
1
2
3
A1  
Y1  
Y2  
Y3  
Y1  
3
4
A4  
14  
1
OE2  
11 Y4  
1
5
OE1  
A2  
A2  
Y2  
5
6
7
10 OE3  
SOEIAJ14  
F SUFFIX  
CASE 965  
6
74HCT125A  
ALYWG  
14  
9
8
A3  
Y3  
1
GND  
4
9
OE2  
A3  
8
A
=
=
=
=
Assembly Location  
Wafer Lot  
Year  
FUNCTION TABLE  
L, WL  
Y, YY  
W, WW  
G
10  
12  
OE3  
A4  
HCT125A  
Work Week  
11  
Inputs Output  
Y4  
= PbFree Package  
= PbFree Package  
A
OE  
Y
G
13  
H
L
L
L
H
L
(Note: Microdot may be in either location)  
OE4  
X
H
Z
PIN 14 = V  
CC  
PIN 7 = GND  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
November, 2009 Rev. 1  
MC74HCT125A/D  

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