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MC14580BCP PDF预览

MC14580BCP

更新时间: 2024-09-08 22:58:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
7页 234K
描述
4 x 4 Multiport Register

MC14580BCP 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:DIP, DIP24,.6Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.84Is Samacsys:N
最长访问时间:1300 nsJESD-30 代码:R-PDIP-T24
JESD-609代码:e0长度:31.75 mm
内存密度:16 bit内存集成电路类型:MULTI-PORT SRAM
内存宽度:4功能数量:1
端口数量:2端子数量:24
字数:4 words字数代码:4
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4X4
输出特性:3-STATE可输出:NO
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP24,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5/15 V
认证状态:Not Qualified座面最大高度:5.08 mm
子类别:Other Memory ICs最大供电电压 (Vsup):18 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

MC14580BCP 数据手册

 浏览型号MC14580BCP的Datasheet PDF文件第2页浏览型号MC14580BCP的Datasheet PDF文件第3页浏览型号MC14580BCP的Datasheet PDF文件第4页浏览型号MC14580BCP的Datasheet PDF文件第5页浏览型号MC14580BCP的Datasheet PDF文件第6页浏览型号MC14580BCP的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
L SUFFIX  
CERAMIC  
CASE 623  
The MC14580B is a 4 by 4 multiport register useful in small scratch pad  
memories, arithmetic operations when coupled with an adder, and other data  
storage applications. It allows independent reading of any two words (or the  
same word at both outputs) while writing into any one of four words.  
Address changing and data entry occur on the rising edge of the clock.  
When the write enable input is low, the contents of any word may be  
accessed but not altered.  
P SUFFIX  
PLASTIC  
CASE 709  
No Restrictions on Clock Input Rise or Fall Times  
3–State Outputs  
Single Phase Clocking  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Capable of Driving Two Low–power TTL Loads or one Low–power  
Schottky TTL Load Over the Rated Temperature Range  
Pin Compatible with CD40108  
DW SUFFIX  
SOIC  
CASE 751E  
ORDERING INFORMATION  
MC14XXXBCP  
MC14XXXBCL  
MC14XXXBDW  
Plastic  
Ceramic  
SOIC  
MAXIMUM RATINGS* (Voltages Referenced to V  
)
SS  
T
A
= – 55° to 125°C for all packages.  
Symbol  
Parameter  
DC Supply Voltage  
Value  
Unit  
V
V
DD  
– 0.5 to + 18.0  
V , V  
in out  
Input or Output Voltage (DC or Transient)  
– 0.5 to V  
DD  
+ 0.5  
V
PIN ASSIGNMENT  
I , I  
Input or Output Current (DC or Transient),  
per Pin  
± 10  
mA  
in out  
Q3  
Q2  
1
2
3
4
5
6
24  
23  
22  
21  
20  
19  
V
DD  
B
Q1  
B
B
B
P
D
Power Dissipation, per Package†  
Storage Temperature  
500  
mW  
C
3–STATE A  
Q0  
T
stg  
– 65 to + 150  
260  
Q0  
Q1  
3–STATE B  
A
T
L
Lead Temperature (8–Second Soldering)  
C
D0  
D1  
A
* Maximum Ratings are those values beyond which damage to the device may occur.  
Temperature Derating:  
Q2  
A
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C  
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125 C  
Q3  
7
18  
17  
16  
15  
14  
13  
D2  
A
WRITE 0  
WRITE 1  
8
D3  
BLOCK DIAGRAM  
9
CLOCK  
WE  
READ 1  
B
10  
11  
12  
W0 W1 R0 R1 R0 R1  
B
A
A
B
8
9
13 14 11 10  
READ 0  
READ 1  
READ 0  
B
A
V
SS  
A
16  
15  
CLOCK  
WE  
DECODER  
3–STATE A  
3
4
5
6
7
Q0  
Q1  
Q2  
A
A
A
WORD A  
OUTPUT  
20  
19  
18  
17  
D0  
D1  
D2  
D3  
Q3  
A
DATA  
INPUT  
4 X 4  
MEMORY  
22  
23  
2
Q0  
Q1  
Q2  
Q3  
B
B
B
WORD B  
OUTPUT  
1
B
21  
3–STATE B  
V
V
= PIN 24  
= PIN 12  
DD  
SS  
REV 3  
1/94  
Motorola, Inc. 1995  

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