5秒后页面跳转
MC14012BD PDF预览

MC14012BD

更新时间: 2024-09-25 04:59:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极逻辑集成电路光电二极管
页数 文件大小 规格书
11页 330K
描述
B-Suffix Series CMOS Gates

MC14012BD 技术参数

生命周期:Transferred零件包装代码:SOIC
包装说明:SOP,针数:14
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.3系列:4000/14000/40000
JESD-30 代码:R-PDSO-G14JESD-609代码:e0
长度:8.65 mm负载电容(CL):50 pF
逻辑集成电路类型:NAND GATE功能数量:2
输入次数:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
传播延迟(tpd):300 ns认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压 (Vsup):18 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
Base Number Matches:1

MC14012BD 数据手册

 浏览型号MC14012BD的Datasheet PDF文件第2页浏览型号MC14012BD的Datasheet PDF文件第3页浏览型号MC14012BD的Datasheet PDF文件第4页浏览型号MC14012BD的Datasheet PDF文件第5页浏览型号MC14012BD的Datasheet PDF文件第6页浏览型号MC14012BD的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
The B Series logic gates are constructed with P and N channel  
enhancement mode devices in a single monolithic structure (Complemen-  
tary MOS). Their primary use is where low power dissipation and/or high  
noise immunity is desired.  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
All Outputs Buffered  
Capable of Driving Two Low–power TTL Loads or One Low–power  
Schottky TTL Load Over the Rated Temperature Range.  
Double Diode Protection on All Inputs Except: Triple Diode Protection  
on MC14011B and MC14081B  
Pin–for–Pin Replacements for Corresponding CD4000 Series B Suffix  
Devices (Exceptions: MC14068B and MC14078B)  
L SUFFIX  
CERAMIC  
CASE 632  
P SUFFIX  
PLASTIC  
CASE 646  
D SUFFIX  
SOIC  
CASE 751A  
ORDERING INFORMATION  
MC14XXXBCP  
MC14XXXBCL  
MC14XXXBD  
Plastic  
Ceramic  
SOIC  
T
A
= – 55° to 125°C for all packages.  
MAXIMUM RATINGS* (Voltages Referenced to V  
)
SS  
Symbol  
Parameter  
DC Supply Voltage  
Value  
Unit  
V
V
DD  
– 0.5 to + 18.0  
V , V  
Input or Output Voltage (DC or Transient)  
– 0.5 to V  
DD  
+ 0.5  
V
in out  
l , l  
Input or Output Current (DC or Transient),  
per Pin  
± 10  
mA  
in out  
P
Power Dissipation, per Package†  
Storage Temperature  
500  
mW  
C
D
T
stg  
– 65 to + 150  
260  
T
Lead Temperature (8–Second Soldering)  
C
L
* Maximum Ratings are those values beyond which damage to the device may occur.  
Temperature Derating:  
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C  
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125 C  
This device contains protection circuitry to guard against damage  
due to high static voltages or electric fields. However, precautions must  
be taken to avoid applications of any voltage higher than maximum rated  
voltages to this high-impedance circuit. For proper operation, V and  
in  
V
out  
should be constrained to the range V  
SS  
(V or V ) V .  
in out DD  
Unused inputs must always be tied to an appropriate logic voltage  
level (e.g., either V or V ). Unused outputs must be left open.  
SS DD  
REV 3  
1/94  
Motorola, Inc. 1995  

与MC14012BD相关器件

型号 品牌 获取价格 描述 数据表
MC14012BDCBS MOTOROLA

获取价格

NAND Gate, CMOS, CDIP14
MC14012BDG ONSEMI

获取价格

B−Suffix Series CMOS Gates
MC14012BDR2 ONSEMI

获取价格

B-Suffix Series CMOS Gates
MC14012BDR2 MOTOROLA

获取价格

4000/14000/40000 SERIES, DUAL 4-INPUT NAND GATE, PDSO14, PLASTIC, SOIC-14
MC14012BDR2G ONSEMI

获取价格

B−Suffix Series CMOS Gates
MC14012BF ONSEMI

获取价格

B-Suffix Series CMOS Gates
MC14012BFEL ONSEMI

获取价格

B-Suffix Series CMOS Gates
MC14012BFELG ONSEMI

获取价格

B−Suffix Series CMOS Gates
MC14012UBAL MOTOROLA

获取价格

NAND Gate, 4000/14000/40000 Series, 2-Func, 4-Input, CMOS, CDIP14, 632-08
MC14012UBALD MOTOROLA

获取价格

4000/14000/40000 SERIES, DUAL 4-INPUT NAND GATE, CDIP14, 632-08