Datasheet > MC10ELT26D

MC10ELT26D

更新时间： 2024-11-30 05:10:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
20页	203K
描述
Evaluation Board Manual for High Frequency SOIC 8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MC10ELT26D 数据手册

ECLSOIC8EVB

Evaluation Board Manual

for High Frequency SOIC 8

http://onsemi.com

EVALUATION BOARD MANUAL

Board Lay−Up

INTRODUCTION

The 8−lead SOIC evaluation board is implemented in four

layers with split (dual) power supplies (Figure 2.

Evaluation Board Lay−up). For standard ECL lab setup and

test, a split (dual) power supply is essential to enable the

50 W internal impedance in the oscilloscope as a termination

for ECL devices. The first layer or primary trace layer is

0.008″ thick Rogers RO4003 material, which is designed to

have equal electrical length on all signal traces from the

device under the test (DUT) to the sense output. The second

layer is the 1.0 oz copper ground plane and a portion of the

ON Semiconductor has developed an evaluation board for

the devices in 8−lead SOIC package. These evaluation

boards are offered as a convenience for the customers

interested in performing their own engineering assessment

on the general performance of the 8−lead SOIC device

samples. The board provides a high bandwidth 50 W

controlled impedance environment. The pictures in Figure 1

show the top and bottom view of the evaluation board, which

can be configured in several different ways, depending on

device under test (See Table 1. Configuration List).

This evaluation board manual contains:

plane is the V power plane. The FR4 dielectric material is

placed between second and third layer and between third and

fourth layer. The third layer is also 1.0 oz copper ground

• Information on 8−lead SOIC Evaluation Board

• Assembly Instructions

• Appropriate Lab Setup

plane and a portion of this layer is V power plane. The

fourth layer is the secondary trace layer.

• Bill of Materials

This manual should be used in conjunction with the device

data sheet, which contains full technical details on the device

specifications and operation.

Figure 1. Top and Bottom View of the 8−lead SOIC Evaluation Board

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 1

ECLSOIC8EVB/D

12 3 4 5 6 7...20

中文翻译

下载PDF

与MC10ELT26D相关器件

型号	品牌	获取价格	描述	数据表
MC10ELT26DR2	MOTOROLA	获取价格	ECL to TTL Translator, 1 Func, True Output, BIPolar, PDSO8, PLASTIC, SOIC-8
MC10ELT28	ONSEMI	获取价格	TTL to Differential PECL/Differential PECL to TTL Translator
MC10ELT28_06	ONSEMI	获取价格	5 V TTL to Differential PECL and Differential PECL to TTL Translator
MC10ELT28D	ONSEMI	获取价格	5 V TTL to Differential PECL and Differential PECL to TTL Translator
MC10ELT28D	MOTOROLA	获取价格	TTL to Differential Pecl/Differential PECL to TTL Translator
MC10ELT28DG	ONSEMI	获取价格	5 V TTL to Differential PECL and Differential PECL to TTL Translator
MC10ELT28DR2	ONSEMI	获取价格	5 V TTL to Differential PECL and Differential PECL to TTL Translator
MC10ELT28DR2G	ONSEMI	获取价格	5 V TTL to Differential PECL and Differential PECL to TTL Translator
MC10ELT28DT	ONSEMI	获取价格	5 V TTL to Differential PECL and Differential PECL to TTL Translator
MC10ELT28DTG	ONSEMI	获取价格	5 V TTL to Differential PECL and Differential PECL to TTL Translator

与MC10ELT26D相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

MC10ELT26D

MC10ELT26D 数据手册

与MC10ELT26D相关器件

与MC10ELT26D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MC10ELT26D

MC10ELT26D 数据手册

与MC10ELT26D相关器件

与MC10ELT26D相关文章

您还可以找

您在本页遇到什么问题？