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MC-4R256CEE6C-653 PDF预览

MC-4R256CEE6C-653

更新时间： 2024-11-28 22:16:39
品牌 Logo 应用领域
日电电子 - NEC 存储内存集成电路动态存储器
页数 文件大小 规格书
16页 130K
描述
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT

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中文翻译

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MC-4R256CEE6C-653 技术参数

生命周期：Obsolete零件包装代码：DMA
包装说明：,针数：184
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.36风险等级：5.84
Is Samacsys：N访问模式：BLOCK ORIENTED PROTOCOL
最长访问时间：53 ns其他特性：SELF REFRESH
JESD-30 代码：R-XDMA-N184内存密度：2147483648 bit
内存集成电路类型：RAMBUS DRAM MODULE内存宽度：16
功能数量：1端口数量：1
端子数量：184字数：134217728 words
字数代码：128000000工作模式：SYNCHRONOUS
组织：128MX16封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
认证状态：Not Qualified自我刷新：YES
最大供电电压 (Vsup)：2.63 V最小供电电压 (Vsup)：2.37 V
标称供电电压 (Vsup)：2.5 V表面贴装：NO
技术：CMOS端子形式：NO LEAD
端子位置：DUALBase Number Matches：1

MC-4R256CEE6C-653 数据手册

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PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4R256CEE6B, 4R256CEE6C  
Direct RambusTM DRAM RIMMTM Module  
256M-BYTE (128M-WORD x 16-BIT)  
Description  
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for  
use in a broad range of applications including computer memory, personal computers, workstations, and other  
applications where high bandwidth and low latency are required.  
MC-4R256CEE6B, 4R256CEE6C modules consists of sixteen 128M Direct Rambus DRAM (Direct RDRAM™)  
devices (µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use  
of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using  
conventional system and board design technologies.  
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).  
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,  
randomly addressed memory transactions. The separate control and data buses with independent row and column  
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions  
per device.  
Features  
• 184 edge connector pads with 1mm pad spacing  
• 256 MB Direct RDRAM storage  
• Each RDRAM has 32 banks, for 512 banks total on module  
• Gold plated contacts  
• RDRAMs use Chip Scale Package (CSP)  
• Serial Presence Detect support  
• Operates from a 2.5 V supply  
• Low power and powerdown self refresh modes  
• Separate Row and Column buses for higher efficiency  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M14541EJ1V1DS00 (1st edition)  
Date Published November 1999 NS CP (K)  
Printed in Japan  
The mark ★ shows major revised points.  
1999  
©
1234567...16

中文翻译

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 		Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
MC-4R256CPE6C-845 ELPIDA

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