MBRS3100P
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
SMC
CASE 403AC
• These are Pb-Free Packages
Mechanical Characteristics
• Case: Epoxy, Molded
MARKING DIAGRAM
• Weight: 217 mg (Approximately)
AYWW
B310G
G
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
B310
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
• Cathode Polarity Band
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Package
Device
Shipping
MBRS3100PT3G
SMC
2,500 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2015 − Rev. 0
MBRS3100P/D