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MBRS3100T3 PDF预览

MBRS3100T3

更新时间: 2024-11-18 22:51:27
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管光电二极管
页数 文件大小 规格书
4页 41K
描述
Surface Mount Schottky Power Rectifier

MBRS3100T3 技术参数

是否无铅:含铅生命周期:Obsolete
包装说明:PLASTIC, CASE 403-03, SMC, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.51
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.62 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:130 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

MBRS3100T3 数据手册

 浏览型号MBRS3100T3的Datasheet PDF文件第2页浏览型号MBRS3100T3的Datasheet PDF文件第3页浏览型号MBRS3100T3的Datasheet PDF文件第4页 
MBRS3100T3  
Preferred Device  
Surface Mount  
Schottky Power Rectifier  
. . . employing the Schottky Barrier principle in a large area  
metal–to–silicon power diode. State–of–the–art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes, in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIERS  
Small Compact Surface Mountable Package with J–Bend Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
Excellent Ability to Withstand Reverse Avalanche Energy Transients  
Guardring for Stress Protection  
3.0 AMPERES  
100 VOLTS  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 217 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
SMC  
CASE 403  
PLASTIC  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Shipped in 16 mm Tape and Reel, 2500 units per reel  
Polarity: Notch in Plastic Body Indicates Cathode Lead  
ESD Ratings: Machine Model = C  
ESD Ratings: Human Body Model = 3B  
Marking: B310  
MARKING DIAGRAM  
YWW  
B310  
Y
= Year  
WW = Work Week  
B310 = Device Code  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
100  
Volts  
RRM  
RWM  
ORDERING INFORMATION  
R
Device  
MBRS3100T3  
Package  
Shipping  
2500/Tape & Reel  
Average Rectified Forward Current  
I
3.0  
Amps  
Amps  
F(AV)  
SMC  
(At Rated V , T = 100°C)  
R
L
Nonrepetitive Peak Surge Current  
(Surge applied at rated load condi-  
tions halfwave, single phase, 60 Hz)  
I
130  
FSM  
Preferred devices are recommended choices for future use  
and best overall value.  
Operating Junction Temperature Range  
T
J
– 65 to  
+150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance – Junction to Lead  
R
11  
°C/W  
θ
JL  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
July, 2001 – Rev. 0  
MBRS3100T3/D  

MBRS3100T3 替代型号

型号 品牌 替代类型 描述 数据表
MBRS3100T3G ONSEMI

完全替代

Surface Mount Schottky Power Rectifier
S310 ONSEMI

类似代替

3.0 A 肖特基势垒整流器

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