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MBRS3100T3D PDF预览

MBRS3100T3D

更新时间: 2024-11-18 22:51:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 41K
描述
Surface Mount Schottky Power Rectifier

MBRS3100T3D 数据手册

 浏览型号MBRS3100T3D的Datasheet PDF文件第2页浏览型号MBRS3100T3D的Datasheet PDF文件第3页浏览型号MBRS3100T3D的Datasheet PDF文件第4页 
MBRS3100T3  
Preferred Device  
Surface Mount  
Schottky Power Rectifier  
. . . employing the Schottky Barrier principle in a large area  
metal–to–silicon power diode. State–of–the–art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes, in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIERS  
Small Compact Surface Mountable Package with J–Bend Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
Excellent Ability to Withstand Reverse Avalanche Energy Transients  
Guardring for Stress Protection  
3.0 AMPERES  
100 VOLTS  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 217 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
SMC  
CASE 403  
PLASTIC  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Shipped in 16 mm Tape and Reel, 2500 units per reel  
Polarity: Notch in Plastic Body Indicates Cathode Lead  
ESD Ratings: Machine Model = C  
ESD Ratings: Human Body Model = 3B  
Marking: B310  
MARKING DIAGRAM  
YWW  
B310  
Y
= Year  
WW = Work Week  
B310 = Device Code  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
100  
Volts  
RRM  
RWM  
ORDERING INFORMATION  
R
Device  
MBRS3100T3  
Package  
Shipping  
2500/Tape & Reel  
Average Rectified Forward Current  
I
3.0  
Amps  
Amps  
F(AV)  
SMC  
(At Rated V , T = 100°C)  
R
L
Nonrepetitive Peak Surge Current  
(Surge applied at rated load condi-  
tions halfwave, single phase, 60 Hz)  
I
130  
FSM  
Preferred devices are recommended choices for future use  
and best overall value.  
Operating Junction Temperature Range  
T
J
– 65 to  
+150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance – Junction to Lead  
R
11  
°C/W  
θ
JL  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
July, 2001 – Rev. 0  
MBRS3100T3/D  

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