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MBRS3200T3 PDF预览

MBRS3200T3

更新时间： 2024-11-19 04:16:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 53K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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MBRS3200T3 技术参数

是否无铅： 含铅生命周期：Obsolete
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.48
应用：GENERAL PURPOSE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.59 VJESD-30 代码：R-PDSO-C2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值正向电流：100 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最大输出电流：3 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大重复峰值反向电压：200 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin/Lead (Sn/Pb)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30

MBRS3200T3 数据手册

 浏览型号MBRS3200T3的Datasheet PDF文件第2页浏览型号MBRS3200T3的Datasheet PDF文件第3页浏览型号MBRS3200T3的Datasheet PDF文件第4页 
MBRS3200T3  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
• Small Compact Surface Mountable Package with J−Bend Leads  
• Rectangular Package for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Very High Blocking Voltage − 200 V  
• 150°C Operating Junction Temperature  
• Guard−Ring for Stress Protection  
3.0 AMPERE  
200 VOLTS  
• Pb−Free Package is Available  
SMB  
Mechanical Charactersistics  
CASE 403A  
PLASTIC  
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0  
• Weight: 95 mg (approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING DIAGRAM  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
AYWW  
B320G  
G
• Cathode Polarity Band  
• Device Meets MSL 1 Requirements  
• ESD Ratings: Machine Model = A  
ESD Ratings: Human Body Model = 1C  
B320  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
WW  
G
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RRM  
200  
V
(Note: Microdot may be in either location)  
V
RWM  
V
R
Average Rectified Forward Current  
(T = 120 °C)  
L
I
3.0  
A
A
F(AV)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
100  
FSM  
MBRS3200T3  
MBRS3200T3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
Operating Junction Temperature  
T
J
−65 to +150  
°C  
SMB  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 3  
MBRS3200T3/D  
1234

中文翻译

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MBRS3200T3 替代型号

型号 品牌 替代类型 描述 数据表
MBRS3200T3G ONSEMI

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