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MBRS3200T3D PDF预览

MBRS3200T3D

更新时间: 2024-11-19 04:16:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 53K
描述
Surface Mount Schottky Power Rectifier

MBRS3200T3D 数据手册

 浏览型号MBRS3200T3D的Datasheet PDF文件第2页浏览型号MBRS3200T3D的Datasheet PDF文件第3页浏览型号MBRS3200T3D的Datasheet PDF文件第4页 
MBRS3200T3  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
Small Compact Surface Mountable Package with J−Bend Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
Very High Blocking Voltage − 200 V  
150°C Operating Junction Temperature  
Guard−Ring for Stress Protection  
3.0 AMPERE  
200 VOLTS  
Pb−Free Package is Available  
SMB  
Mechanical Charactersistics  
CASE 403A  
PLASTIC  
Case: Epoxy, Molded, Epoxy Meets UL 94, V−0  
Weight: 95 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING DIAGRAM  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
AYWW  
B320G  
G
Cathode Polarity Band  
Device Meets MSL 1 Requirements  
ESD Ratings: Machine Model = A  
ESD Ratings: Human Body Model = 1C  
B320  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
WW  
G
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RRM  
200  
V
(Note: Microdot may be in either location)  
V
RWM  
V
R
Average Rectified Forward Current  
(T = 120 °C)  
L
I
3.0  
A
A
F(AV)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
100  
FSM  
MBRS3200T3  
MBRS3200T3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
Operating Junction Temperature  
T
J
−65 to +150  
°C  
SMB  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 3  
MBRS3200T3/D  

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