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MBRS3100T3G

更新时间： 2024-11-19 04:16:39
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管光电二极管PC
页数 文件大小 规格书
4页 43K
描述
Surface Mount Schottky Power Rectifier

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中文翻译

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MBRS3100T3G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMC, 2 PIN针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80Factory Lead Time：1 week
风险等级：1.25Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：225024
Samacsys Pin Count：2Samacsys Part Category：Diode
Samacsys Package Category：Diodes MouldedSamacsys Footprint Name：SMC CASE403-03
Samacsys Released Date：2015-11-03 12:30:39Is Samacsys：N
其他特性：FREE WHEELING DIODE应用：POWER
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.62 V
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：130 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：3 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：100 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MBRS3100T3G 数据手册

 浏览型号MBRS3100T3G的Datasheet PDF文件第2页浏览型号MBRS3100T3G的Datasheet PDF文件第3页浏览型号MBRS3100T3G的Datasheet PDF文件第4页 
MBRS3100T3  
Preferred Device  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes, in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIERS  
3.0 AMPERES, 100 VOLTS  
Features  
• Small Compact Surface Mountable Package with J−Bend Leads  
• Rectangular Package for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Excellent Ability to Withstand Reverse Avalanche Energy Transients  
• Guard−Ring for Stress Protection  
• Pb−Free Package is Available  
SMC  
CASE 403  
PLASTIC  
Mechanical Characteristics  
• Case: Epoxy, Molded  
• Weight: 217 mg (Approximately)  
MARKING DIAGRAM  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
AYWW  
B310G  
G
• Polarity: Notch in Plastic Body Indicates Cathode Lead  
• ESD Ratings: Machine Model = C  
Human Body Model = 3B  
B310  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
WW  
G
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
100  
V
RRM  
RWM  
(Note: Microdot may be in either location)  
V
R
Average Rectified Forward Current  
I
3.0  
A
A
F(AV)  
ORDERING INFORMATION  
(At Rated V , T = 100°C)  
R
L
†
Package  
Device  
Shipping  
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
130  
FSM  
MBRS3100T3  
SMC  
2500/Tape & Reel  
MBRS3100T3G  
SMC  
2500/Tape & Reel  
Operating Junction Temperature Range  
(Note 1)  
T
J
− 65 to +175  
°C  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction−to−Lead  
R
11  
°C/W  
q
JL  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 2  
MBRS3100T3/D  
 
1234

中文翻译

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MBRS3100T3G 替代型号

型号 品牌 替代类型 描述 数据表
MBRS3100T3 ONSEMI

完全替代

 Surface Mount Schottky Power Rectifier
SS3H10-E3/57T VISHAY

功能相似

 DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,

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