Datasheet > MBRS3150

MBRS3150

更新时间： 2023-12-06 20:03:32

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	1037K
描述
Rectifier device Schottky Diode

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中文翻译

获取价格

数据手册

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MBRS3150 数据手册

MBRS3150-MBRS3200

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 150 - 200V

CURRENT: 3.0 A

Features

Low Profile surface mount applications

in order to optimize board space.

Low power loss, high efficien.cy

High current capability, low forward voltage drop.

High surge capabili.ty

Guard ring for overvoltage protection.

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Ultra high-speed switching.

Silicon epitaxial planar chip,metal silicon junction.

SMB(DO-214AA)

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Parameter

Symbol

Unit

MBRS3150

MBRS3200

Max. repetitive peak reverse voltage

Max. DC blocking voltage

Max. RMS voltage

VRRM

VDC

VRMS

150

105

0.87

200

140

0.90

Max. instantaneous forward voltage @

3.0A, TA=25°C

Operating Temperature

-50 to +175

°C

Symbol

Parameter

Conditions

MIN.

TYP.

MAX.

Unit

see Fig.1

Forward rectified current

Forward surge current

3.0

8.3ms single half sine-wave superimposed

on rate load (JEDEC method)

IFSM

VR =VRRM TA=25°C

VR =VRRM TA=100°C

0.5

Reverse Current

Thermal Resistance

Junction to ambient

RθJA

°C/W

Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage

Storage temperature

250

TSTG

-50

+175

°C

1 of 2

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