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MBRS3150 PDF预览

MBRS3150

更新时间: 2024-11-20 14:53:43
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 1037K
描述
Rectifier device Schottky Diode

MBRS3150 数据手册

 浏览型号MBRS3150的Datasheet PDF文件第2页 
MBRS3150-MBRS3200  
SURFACE MOUNT SCHOTTKY BARRIER DIODES  
VOLTAGE RANGE: 150 - 200V  
CURRENT: 3.0 A  
Features  
!
Low Profile surface mount applications  
in order to optimize board space.  
!
!
!
!
Low power loss, high efficien.cy  
High current capability, low forward voltage drop.  
High surge capabili.ty  
Guard ring for overvoltage protection.  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
!
!
Ultra high-speed switching.  
Silicon epitaxial planar chip,metal silicon junction.  
SMB(DO-214AA)  
B
Dim  
Min  
3.30  
4.06  
1.91  
0.15  
5.00  
0.10  
0.76  
2.00  
Max  
A
B
C
D
E
G
H
J
3.94  
4.70  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
Mechanical Data  
A
J
C
!
!
Case: SMB/DO-214AA, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
D
!
!
!
Weight: 0.093 grams (approx.)  
G
H
All Dimensions in mm  
E
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Parameter  
Symbol  
Unit  
MBRS3150  
MBRS3200  
Max. repetitive peak reverse voltage  
Max. DC blocking voltage  
Max. RMS voltage  
VRRM  
VDC  
VRMS  
VF  
150  
150  
105  
0.87  
200  
200  
140  
0.90  
V
V
V
Max. instantaneous forward voltage @  
3.0A, TA=25°C  
V
Operating Temperature  
TJ  
-50 to +175  
°C  
Symbol  
IO  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Unit  
A
see Fig.1  
Forward rectified current  
Forward surge current  
3.0  
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
70  
A
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
0.5  
20  
mA  
mA  
Reverse Current  
Thermal Resistance  
Junction to ambient  
RθJA  
CJ  
55  
°C/W  
pF  
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage  
Storage temperature  
250  
TSTG  
-50  
+175  
°C  
1 of 2  
www.sunmate.tw  

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