MBRS3150-MBRS3200
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 150 - 200V
CURRENT: 3.0 A
Features
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Low Profile surface mount applications
in order to optimize board space.
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Low power loss, high efficien.cy
High current capability, low forward voltage drop.
High surge capabili.ty
Guard ring for overvoltage protection.
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Ultra high-speed switching.
Silicon epitaxial planar chip,metal silicon junction.
SMB(DO-214AA)
B
Dim
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
A
B
C
D
E
G
H
J
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
Mechanical Data
A
J
C
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Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
D
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Weight: 0.093 grams (approx.)
G
H
All Dimensions in mm
E
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Parameter
Symbol
Unit
MBRS3150
MBRS3200
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
VRRM
VDC
VRMS
VF
150
150
105
0.87
200
200
140
0.90
V
V
V
Max. instantaneous forward voltage @
3.0A, TA=25°C
V
Operating Temperature
TJ
-50 to +175
°C
Symbol
IO
Parameter
Conditions
MIN.
TYP.
MAX.
Unit
A
see Fig.1
Forward rectified current
Forward surge current
3.0
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
70
A
VR =VRRM TA=25°C
VR =VRRM TA=100°C
IR
IR
0.5
20
mA
mA
Reverse Current
Thermal Resistance
Junction to ambient
RθJA
CJ
55
°C/W
pF
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
Storage temperature
250
TSTG
-50
+175
°C
1 of 2
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