MBRS3100T3
Preferred Device
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• Pb−Free Package is Available
SMC
CASE 403
PLASTIC
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
MARKING DIAGRAM
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
B310G
G
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• ESD Ratings: Machine Model = C
Human Body Model = 3B
B310
A
Y
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
WW
G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
100
V
RRM
RWM
(Note: Microdot may be in either location)
V
R
Average Rectified Forward Current
I
3.0
A
A
F(AV)
ORDERING INFORMATION
(At Rated V , T = 100°C)
R
L
†
Package
Device
Shipping
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
130
FSM
MBRS3100T3
SMC
2500/Tape & Reel
MBRS3100T3G
SMC
2500/Tape & Reel
Operating Junction Temperature Range
(Note 1)
T
J
− 65 to +175
°C
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
R
11
°C/W
q
JL
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Preferred devices are recommended choices for future use
and best overall value.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 2
MBRS3100T3/D