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MBRS1060 PDF预览

MBRS1060

更新时间: 2024-11-06 04:16:35
品牌 Logo 应用领域
TSC 二极管瞄准线功效
页数 文件大小 规格书
2页 163K
描述
10.0 AMPS. Surface Mount Schottky Barrier Rectifiers

MBRS1060 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.61Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:120 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:60 V表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

MBRS1060 数据手册

 浏览型号MBRS1060的Datasheet PDF文件第2页 
MBRS1035 - MBRS10150  
10.0 AMPS. Surface Mount Schottky Barrier Rectifiers  
D2PAK  
Features  
Plastic material used carries Underwriters  
Laboratory Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
Dimensions in inches and (millimeters)  
Cases: JEDEC D2PAK molded plastic body  
Terminals: Pure tin plated, lead free. solderable  
per MIL-STD-750, Method 2026  
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBRS MBRS MBRS MBRS MBRS MBRS MBRS  
1035 1045 1050 1060 1090 10100 10150  
Symbol  
Type Number  
Units  
35  
24  
35  
45  
31  
45  
50  
35  
50  
60  
42  
60  
90  
63  
90  
100  
150  
105  
150  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRRM  
VRMS  
VDC  
70  
100  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
See Fig. 1  
I(AV)  
10  
A
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
IFSM  
IRRM  
A
A
120  
Peak Repetitive Reverse Surge Current (Note 1)  
1.0  
0.5  
Maximum Instantaneous Forward Voltage at (Note 2)  
IF=10A, Tc=25oC  
0.80  
0.70  
0.95  
0.85  
0.85  
0.71  
1.05  
IF=10A, Tc=125oC  
0.57  
0.84  
0.72  
V
VF  
IF=20A, Tc=25oC  
IF=20A, Tc=125oC  
Maximum Instantaneous Reverse Current @ TJ =25 oC  
at Rated DC Blocking Voltage (Note 2) @ TJ=100 oC  
0.1  
0.1  
5.0  
mA  
mA  
IR  
15  
10  
Typical Junction capacitance  
pF  
390  
300  
220  
CJ  
Maximum Thermal Resistance, Junction to Case  
R
60  
2.0  
oC/W  
ΘJA  
R
ΘJC  
TJ  
TSTG  
oC  
oC  
Operating Junction Temperature Range  
Storage Temperature Range  
-65 to +175  
-65 to +175  
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle.  
Version: B07  

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