Datasheet > MBRS1100T3_07

MBRS1100T3_07

更新时间： 2024-11-19 04:16:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	49K
描述
Schottky Power Rectifier Surface Mount Power Package

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中文翻译

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数据手册

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MBRS1100T3_07 数据手册

MBRS1100T3, MBRS190T3

Preferred Devices

Schottky Power Rectifier

Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal-to-silicon power diode. State-of-the-art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes, in

surface mount applications where compact size and weight are critical

to the system. These state-of-the-art devices have the following

features:

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERE

90, 100 VOLTS

Features

• Pb−Free Packages are Available

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• High Blocking Voltage − 100 Volts

SMB

CASE 403A

PLASTIC

• 175°C Operating Junction Temperature

• Guardring for Stress Protection

MARKING DIAGRAM

Mechanical Characteristics

• Case: Epoxy, Molded

AYW

B1xG

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

B1 = Device Code

= C for MBRS1100T3

9 for MBRS190T3

= Assembly Location

= Year

= Work Week

= Pb−Free Package

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped in 12 mm Tape and Reel, 2500 units per reel

• Cathode Polarity Band

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MBRS190T3

MBRS1100T3

RRM

RWM

100

Preferred devices are recommended choices for future use

and best overall value.

Average Rectified Forward Current

F(AV)

T = 163°C

T = 148°C

1.0

2.0

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

FSM

Operating Junction Temperature (Note 1)

Voltage Rate of Change

−65 to +175

°C

dv/dt

V/ns

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dP /dT < 1/R .

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

March, 2007 − Rev. 9

MBRS1100T3/D

12 3 4

中文翻译

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与MBRS1100T3_07相关器件

型号	品牌	获取价格	描述	数据表
MBRS1100T3G	ONSEMI	获取价格	Schottky Power Rectifier Surface Mount Power Package
MBRS1100TR	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBRS1100TRPBF	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBRS1100TRPBF	VISHAY	获取价格	Schottky Rectifier, 1.0 A
MBRS120	INFINEON	获取价格	SCHOTTKY RECTIFIER 1 Amp
MBRS120	ONSEMI	获取价格	1.5 A, 170 kHz, Buck Regulator with Synchronization Capability
MBRS120	SUNMATE	获取价格	Rectifier device Schottky Diode
MBRS120-FL	GXELECTRONICS	获取价格	Low power loss,high efficiency
MBRS120T3	ONSEMI	获取价格	Surface Mount Schottky Power Rectifier
MBRS120T3	EIC	获取价格	Schottky Barrier Rectifiers

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